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2N7002E-7-F PDF预览

2N7002E-7-F

更新时间: 2024-02-23 21:19:23
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
4页 411K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002E-7-F 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:0.45Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/248861.1.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=248861PCB Footprint:https://componentsearchengine.com/footprint.php?partID=248861
3D View:https://componentsearchengine.com/viewer/3D.php?partID=248861Samacsys PartID:248861
Samacsys Image:https://componentsearchengine.com/Images/9/2N7002E-7-F.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/2N7002E-7-F.jpg
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:sot-23--
Samacsys Released Date:2020-02-09 02:42:44Is Samacsys:N
其他特性:LOW THRESHOLD配置:SINGLE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.24 A
最大漏极电流 (ID):0.24 A最大漏源导通电阻:3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002E-7-F 数据手册

 浏览型号2N7002E-7-F的Datasheet PDF文件第2页浏览型号2N7002E-7-F的Datasheet PDF文件第3页浏览型号2N7002E-7-F的Datasheet PDF文件第4页 
SPICE MODEL: 2N7002E  
2N7002E  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT  
TRANSISTOR  
Features  
·
·
·
·
·
·
Low On-Resistance: RDS(ON)  
SOT-23  
Low Gate Threshold Voltage  
Low Input Capacitance  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
Fast Switching Speed  
D
B
Low Input/Output Leakage  
Lead Free/RoHS Compliant (Note 2)  
B
C
C
D
TOP VIEW  
G
S
D
E
E
Mechanical Data  
G
G
H
H
·
·
·
·
·
·
·
·
·
·
Case: SOT-23  
K
Case Material: UL Flammability Classification Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed  
over Alloy 42 leadframe).  
M
J
J
L
K
L
M
Terminal Connections: See Diagram  
Marking (See Page 2): K7B  
a
All Dimensions in mm  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Symbol  
Maximum Ratings  
Characteristic  
Value  
60  
Units  
VDSS  
VDGR  
V
V
Drain-Source Voltage  
60  
Drain-Gate Voltage RGS £ 1.0MW  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
VGSS  
V
ID  
mA  
mW  
°C/W  
°C  
Drain Current  
Continuous  
240  
300  
Pd  
Total Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
R
qJA  
417  
Tj, TSTG  
-55 to +150  
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30376 Rev. 5 - 2  
1 of 4  
2N7002E  
www.diodes.com  
ã Diodes Incorporated  

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