2N7002A
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
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Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Copper
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
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Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.008 grams (approximate)
Drain
SOT-23
D
Gate
S
G
Gate
Protection
Diode
ESD PROTECTED, 1.2kV
TOP VIEW
Source
TOP VIEW
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
Value
60
Units
V
V
Drain-Source Voltage
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Continuous
±20
115
73
VGSS
Continuous
Continuous @ 100°C
Pulsed
mA
ID
800
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
PD
Rθ
Value
250
1.6
Units
mW
mW/°C
Total Power Dissipation
Derating above TA = 25°C (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
500
°C/W
°C
JA
TJ, TSTG
-55 to +150
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Symbol Min
Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
60
⎯
⎯
70
⎯
⎯
V
BVDSS
IDSS
⎯
1.0
500
VGS = 0V, ID = 10μA
@ TC
@ TC = 125°C
= 25°C
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
±10
IGSS
μA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
1.2
⎯
2.0
V
Ω
VGS(th)
RDS (ON)
gFS
⎯
3.5
3.0
VDS = VGS, ID = 250μA
VGS = 5.0V, ID = 0.115A
Static Drain-Source On-Resistance
@ TJ = 25°C
@ TJ = 125°C
6
5
V
GS = 10V, ID = 0.115A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
80
mS
⎯
⎯
VDS = 10V, ID = 0.115A
23
3.4
1.4
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance
V
V
DS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
10
33
ns
tD(ON)
tD(OFF)
⎯
⎯
⎯
⎯
DD = 30V, ID = 0.115A, RL = 150Ω,
Turn-Off Delay Time
ns VGEN = 10V, RGEN = 25Ω
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants.
1 of 4
www.diodes.com
May 2008
© Diodes Incorporated
2N7002A
Document number: DS31360 Rev. 4 - 2
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