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2DD1664R-13 PDF预览

2DD1664R-13

更新时间: 2024-01-12 09:09:38
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关PC
页数 文件大小 规格书
4页 223K
描述
NPN SURFACE MOUNT TRANSISTOR

2DD1664R-13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:4
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:19 weeks风险等级:1.72
Samacsys Confidence:4Samacsys Status:Released
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=1227029PCB Footprint:https://componentsearchengine.com/footprint.php?partID=1227029
Samacsys PartID:1227029Samacsys Image:https://componentsearchengine.com/Images/9/2DD1664R-13.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/2DD1664R-13.jpgSamacsys Pin Count:4
Samacsys Part Category:Transistor BJT PNPSamacsys Package Category:Other
Samacsys Footprint Name:SOT-89_FFWSamacsys Released Date:2019-07-01 22:33:42
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):180
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):280 MHz
Base Number Matches:1

2DD1664R-13 数据手册

 浏览型号2DD1664R-13的Datasheet PDF文件第2页浏览型号2DD1664R-13的Datasheet PDF文件第3页浏览型号2DD1664R-13的Datasheet PDF文件第4页 
2DD1664P/Q/R  
NPN SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Complementary PNP Type Available (2DB1132)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
TOR  
LLEC  
2,4  
CO  
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
3 E  
2 C  
1 B  
C 4  
T
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
1
ASE  
B
3
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
EMITTER  
EW  
VI  
OP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
Value  
Unit  
V
40  
32  
5
VCBO  
VCEO  
VEBO  
ICM  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
2
A
Continuous Collector Current  
1
A
IC  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
C = 50μA, IE = 0  
40  
32  
5
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
I
I
I
C = 1mA, IB = 0  
V
E = 50μA, IC = 0  
0.5  
μA  
μA  
V
V
CB = 20V, IE = 0  
EB = 4V, IC = 0  
Emitter Cut-Off Current  
0.5  
IEBO  
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
0.12  
0.4  
180  
270  
390  
V
VCE(SAT)  
82  
120  
180  
IC = 500mA, IB = 50mA  
VCE = 3V, IC = 100mA  
2DD1664P  
2DD1664Q  
2DD1664R  
DC Current Gain  
hFE  
SMALL SIGNAL CHARACTERISTICS  
VCE = 5V, IE = -50mA,  
f = 100MHz  
VCB = 10V, IE = 0,  
f = 1MHz  
Transition Frequency  
280  
10  
MHz  
pF  
fT  
Output Capacitance  
Cob  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.  
DS31143 Rev. 4 - 2  
1 of 4  
www.diodes.com  
2DD1664P/Q/R  
© Diodes Incorporated  

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