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2DB1132Q-13 PDF预览

2DB1132Q-13

更新时间: 2024-01-04 01:35:01
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 185K
描述
PNP SURFACE MOUNT TRANSISTOR

2DB1132Q-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:5.71Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):190 MHzBase Number Matches:1

2DB1132Q-13 数据手册

 浏览型号2DB1132Q-13的Datasheet PDF文件第2页浏览型号2DB1132Q-13的Datasheet PDF文件第3页浏览型号2DB1132Q-13的Datasheet PDF文件第4页 
2DB1132P/Q/R  
PNP SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Complementary NPN Type Available (2DD1664)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
TOR  
LLEC  
2,4  
CO  
3 E  
2 C  
1 B  
C 4  
T
1
ASE  
B
3
EMITTER  
EW  
VI  
OP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-40  
-32  
-5  
Unit  
V
V
V
A
Peak Pulse Current  
-2  
Continuous Collector Current  
-1  
A
IC  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
-40  
-32  
-5  
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC = -50μA, IE = 0  
IC = -1mA, IB = 0  
IE = -50μA, IC = 0  
VCB = -20V, IE = 0  
VEB = -4V, IC = 0  
V
-0.5  
μA  
μA  
Emitter Cut-Off Current  
-0.5  
IEBO  
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
-0.125  
-0.5  
180  
270  
390  
V
VCE(SAT)  
82  
120  
180  
IC = -500mA, IB = -50mA  
2DB1132P  
2DB1132Q  
2DB1132R  
DC Current Gain  
hFE  
VCE = -3V, IC = -100mA  
SMALL SIGNAL CHARACTERISTICS  
VCE = -5V, IE = 50mA  
f = 30MHz  
VCB = -10V, IE = 0,  
f = 1MHz  
Transition Frequency  
190  
12  
MHz  
pF  
fT  
Output Capacitance  
30  
Cob  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.  
DS31142 Rev. 4 - 2  
1 of 4  
www.diodes.com  
2DB1132P/Q/R  
© Diodes Incorporated  

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