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AM29LV008T-100FEB PDF预览

AM29LV008T-100FEB

更新时间: 2024-02-09 12:55:22
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赛普拉斯 - CYPRESS /
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39页 142K
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AM29LV008T-100FEB 数据手册

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PRELIMINARY  
Am29LV008T/Am29LV008B  
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only,  
Sectored Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— Extended voltage range: 2.7 to 3.6 volt read and  
write operations for battery-powered  
applications  
— Embedded Erase algorithms automatically  
preprogram and erase the entire chip or any  
combination of designated sectors  
— Standard voltage range: 3.0 to 3.6 volt read and  
write operations and for compatibility with high  
performance 3.3 volt microprocessors  
— Embedded Program algorithms automatically  
write and verify bytes or words at specified  
addresses  
High performance  
Minimum 100,000 write cycle guarantee per  
sector  
— Extended voltage range:access times as fast as  
100 ns  
Package option  
— Standard voltage range: access times as fast as  
90 ns  
— 40-pin TSOP  
Compatibility with JEDEC standards  
Ultra low power consumption  
— Automatic Sleep Mode: 200 nA typical  
— Standby mode: 200 nA typical  
— Read mode: 2 mA/MHz typical  
— Program/erase mode: 20 mA typical  
Flexible sector architecture  
— Pinout and software compatible with single-  
power supply Flash  
— Superior inadvertent write protection  
Data Polling and toggle bits  
— Provides a software method of detecting  
program or erase operation completion  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
fifteen 64 Kbyte sectors  
Ready/Busy pin  
— Provides a hardware method of detecting  
program or erase cycle completion  
— Supports control code and data storage on a  
single device  
Erase suspend/resume feature  
— Sector Protection features:  
— Provides the ability to suspend the erase  
operation in any sector, read data from or  
program data to any other sector, then return to  
the original sector and complete the initial erase  
operation  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
Hardware reset pin (RESET)  
Top or bottom boot block configurations  
— Hardware method to reset the device to the read  
mode  
available  
GENERAL DESCRIPTION  
The Am29LV008 is an 8 Mbit, 3.0 Volt-only Flash mem-  
ory organized as 512 Kbytes of 8 bits each. For flexible  
erase and program capability, the 512 Kbits of data is  
divided into 19 sectors of one 16 Kbyte, two 8 Kbyte,  
one 32 Kbyte, and fifteen 64 Kbytes. The data appears  
on DQ0–DQ7. The Am29LV008 is offered in a 40-pin  
TSOP package. This device is designed to be pro-  
grammed in-system with the standard system 3.0 volt  
V
supply. The device can also be reprogrammed in  
CC  
standard EPROM programmers.  
The Am29LV008 provides two levels of performance.  
The first level offers access times as fast as 100 ns with  
a V  
range as low as 2.7 volts, which is optimal for  
CC  
battery powered applications.The second level offers a  
This document contains information on a product under development at Advanced Micro Devices. The information  
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed  
product without notice.  
Publication# 20511 Rev: C Amendment/+1  
Issue Date: May 1997  

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