5秒后页面跳转
7C1041AV33-12 PDF预览

7C1041AV33-12

更新时间: 2022-11-24 21:08:18
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
9页 142K
描述
256K x 16 Static RAM

7C1041AV33-12 数据手册

 浏览型号7C1041AV33-12的Datasheet PDF文件第2页浏览型号7C1041AV33-12的Datasheet PDF文件第3页浏览型号7C1041AV33-12的Datasheet PDF文件第4页浏览型号7C1041AV33-12的Datasheet PDF文件第5页浏览型号7C1041AV33-12的Datasheet PDF文件第6页浏览型号7C1041AV33-12的Datasheet PDF文件第7页 
33  
CY7C1041AV33/  
GVT73256A16  
PRELIMINARY  
256K x 16 Static RAM  
Functional Description  
Features  
• Fast access times: 10, 12 ns  
The CY7C1049AV33\GVT73512A8 is organized as a 262,144  
x 16 SRAM using a four-transistor memory cell with a high-per-  
formance, silicon gate, low-power CMOS process. Cypress  
SRAMs are fabricated using double-layer polysilicon, dou-  
ble-layer metal technology.  
• Fast OE access times: 5, 6, and 7 ns  
• Single +3.3V ±0.3V power supply  
• Fully static—no clock or timing strobes necessary  
• All inputs and outputs are TTL-compatible  
• Three state outputs  
• Center power and ground pins for greater noise  
immunity  
• Easy memory expansion with CE and OE options  
• Automatic CE power-down  
This device offers center power and ground pins for improved  
performance and noise immunity. Static design eliminates the  
need for external clocks or timing strobes. For increased sys-  
tem flexibility and eliminating bus contention problems, this de-  
vice offers Chip Enable (CE), separate Byte Enable controls  
(BLE and BHE) and Output Enable (OE) with this organization.  
• High-performance, low power consumption, CMOS  
double-poly, double-metal process  
• Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil  
TSOP  
The device offers a low-power standby mode when chip is not  
selected. This allows system designers to meet low standby  
power requirements.  
Functional Block Diagram  
Pin Configuration  
VCC  
VSS  
SOJ/TSOP II  
Top View  
BLE#  
44  
43  
42  
41  
40  
39  
38  
1
2
3
4
5
6
A
A
A
A
0
17  
16  
15  
A
1
DQ1  
DQ8  
DQ9  
DQ16  
A
A0  
2
A
OE  
3
BHE  
BLE  
DQ  
DQ  
DQ  
A
4
CE  
DQ  
DQ  
DQ  
7
1
16  
MEMORY ARRAY  
512 ROWS X 256 X 16  
COLUMNS  
37  
36  
35  
34  
33  
8
2
3
15  
14  
13  
9
10  
11  
12  
13  
DQ  
DQ  
4
V
V
SS  
CC  
V
V
SS  
CC  
32  
31  
30  
29  
28  
27  
DQ  
DQ  
DQ  
DQ  
DQ  
12  
11  
5
6
7
8
DQ  
14  
15  
16  
DQ  
DQ  
NC  
10  
9
WE 17  
18  
A
14  
A
5
19  
26  
25  
A
A
A
A
6
13  
12  
11  
A
20  
21  
22  
A16  
7
POWER  
DOWN  
CE#  
BHE#  
WE#  
COLUMN DECODER  
A
24  
23  
8
9
A
A
10  
OE#  
Selection Guide  
CY7C1049AV33-10/ CY7C1049AV33-12/  
GVT73512A8-10  
GVT73512A8-12  
Maximum Access Time (ns)  
10  
240  
10  
12  
210  
10  
Maximum Operating Current (mA)  
Maximum CMOS Standby Current (mA)  
Com’l/Ind’l  
Com’l  
L
3.0  
3.0  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
June 15, 2000  

与7C1041AV33-12相关器件

型号 品牌 描述 获取价格 数据表
7C1203B4 VISHAY RESISTOR, TEMPERATURE DEPENDENT, NTC, 120000 ohm, THROUGH HOLE MOUNT, RADIAL LEADED

获取价格

7C1203B5 VISHAY RESISTOR, TEMPERATURE DEPENDENT, NTC, 120000 ohm, THROUGH HOLE MOUNT, RADIAL LEADED

获取价格

7C1203B8 VISHAY RESISTOR, TEMPERATURE DEPENDENT, NTC, 120000 ohm, THROUGH HOLE MOUNT, RADIAL LEADED

获取价格

7C1203C5 VISHAY RESISTOR, TEMPERATURE DEPENDENT, NTC, 120000 ohm, THROUGH HOLE MOUNT, RADIAL LEADED

获取价格

7C1203F VISHAY RESISTOR, TEMPERATURE DEPENDENT, NTC, 120000 ohm, THROUGH HOLE MOUNT, RADIAL LEADED

获取价格

7C132-25 CYPRESS 2Kx8 Dual-Port Static RAM

获取价格