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27H010

更新时间: 2022-11-25 16:10:24
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
9页 215K
描述
128K x 8 High-Speed CMOS EPROM

27H010 数据手册

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1CY27H010  
fax id: 3023  
CY27H010  
128K x 8 High-Speed CMOS EPROM  
try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I  
packages. These devices offer high-density storage com-  
bined with 40-MHz performance. The CY27H010 is available  
in windowed and opaque packages. Windowed packages al-  
low the device to be erased with UV light for 100% re-  
programmability.  
Features  
• CMOS for optimum speed/power  
• High speed  
— t = 25 ns max. (commercial)  
AA  
— t = 35 ns max. (military)  
AA  
The CY27H010 is equipped with a power-down chip enable  
(CE) input and output enable (OE). When CE is deasserted,  
the device powers down to a low-power stand-by mode. The  
OE pin three-states the outputs without putting the device into  
stand-by mode. While CE offers lower power, OE provides a  
more rapid transition to and from three-stated outputs.  
• Low power  
— 275 mW max.  
— Less than 85 mW when deselected  
• Byte-wide memory organization  
• 100% reprogrammable in thewindowed package  
• EPROM technology  
• Capable of withstanding >2001V static discharge  
• Available in  
The memory cells utilize proven EPROM floating-gate technol-  
ogy and byte-wide intelligent programming algorithms. The  
EPROM cell requires only 12.75 V for the supervoltage and  
low programming current allows for gang programming. The  
device allows for each memory location to be tested 100%,  
because each location is written to, erased, and repeatedly  
exercised prior to encapsulation. Each device is also tested  
for AC performance to guarantee that the product will meet DC  
and AC specification limits after customer programming.  
— 32-pin PLCC  
— 32-pin TSOP-I  
— 32-pin, 600-mil plastic or hermetic DIP  
— 32-pin hermetic LCC  
The CY27H010 is read by asserting both the CE and the OE  
inputs. The contents of the memory location selected by the  
Functional Description  
address on inputs A –A will appear at the outputs O –O .  
16  
0
7
0
The CY27H010 is a high-performance, 1-megabit CMOS  
EPROM organized in 128 Kbytes. It is available in indus-  
Logic Block Diagram  
Pin Configurations  
DIP  
A
0
Top View  
O
0
A
1
V
32  
31  
30  
V
1
CC  
PP  
A
2
A
A
A
PGM  
NC  
2
3
4
16  
15  
12  
O
1
O
2
O
3
A
3
PROGRAMMABLE  
ARRAY  
A
14  
29  
28  
A
4
A
5
A
13  
7
27  
26  
A
A
5
6
A
A
6
A
5
8
7
9
A
6
25  
24  
23  
22  
21  
A
8
9
10  
11  
12  
13  
A
11  
4
A
3
OE  
A
MULTIPLEXER  
7
ADDRESS  
DECODER  
A
2
A
10  
O
O
A
8
4
CE  
O
O
6
A
1
A
7
0
0
1
A
9
O
O
O
20  
19  
5
6
7
O
5
A
10  
11  
12  
13  
14  
15  
16  
O
4
O
3
2
18  
17  
A
A
A
GND  
O
O
POWER DOWN  
H010–2  
LCC/PLCC  
Top View  
A
A
14  
15  
16  
4
3
2
323130  
1
A
A
A
A
A
A
A
29  
14  
7
5
6
7
8
A
6
28  
27  
26  
25  
24  
23  
22  
21  
13  
8
A
5
A
4
9
A
11  
3
9
CE  
OE  
A
OE  
2
10  
11  
12  
13  
OUTPUT ENABLE  
DECODER  
A
A
10  
1
A
CE  
O
0
O
0
7
14151617 181920  
H010–1  
H010–3  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
August 1994 – Revised March 1997  

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