2N3866

更新时间： 2024-02-22 09:16:30

品牌	Logo	应用领域
COMSET		晶体晶体管局域网
页数	文件大小	规格书
2页	98K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

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技术参数
数据手册

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2N3866 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

2N3866 数据手册

NPN 2N3866

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector

connected to the case .

They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CEO

Collector-Emitter Voltage

Collector-Emitter Voltage (V_BE= 0)

Emitter-Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

3.5

0.5

V_CES

V_EBO

I_C

P_D

T_J

@ T_case= 25°

Watts

°C

200

T_Stg

Storage Temperature range

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol Ratings

Value

Unit

Thermal Resistance, Junction-case

R_thJ-c

°C/ W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Test Condition(s)

Symbol

Ratings

Min

Typ Max Unit

I_CEO

Collector Cutoff Current

Collector Emitter Sustaining

Voltage

V_CE=28 V, I_B=0

µA

V_CEO(*)

I_C=5 mA, I_B=0

V_CES

V_EBO

Collector Base Breakdown Voltage I_C=100 µA, V_BE=0

Emitter Base Breakdown Voltage I_E=100 µA, I_C=0

3.5

200

I_C=50 mA, V_CE=5 V

h_FE(*)

DC Current Gain

I_C=360 mA, V_CE=5 V

Collector-Emitter saturation

Voltage

I_C=100 mA

I_B=20 mA

V_CE(SAT)(*)

COMSET SEMICONDUCTORS

1/2

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