MMBT3904

更新时间： 2024-01-14 08:29:34

品牌	Logo	应用领域
上华 - COMCHIP		晶体晶体管开关光电二极管
页数	文件大小	规格书
6页	138K
描述
General Purpose Transistor (NPN)

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技术参数
数据手册

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MMBT3904 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904 数据手册

GGeenneerraall PPurpossee TTrransistor (NPN)

CCOOMMCCHHIIPP

www.comchiptech.com

MMBT3904

NPN Silicon Type

Features

Epitaxial Planar Die Construction

SOT-23

Complementary PNP Type Available

(MMBT3906)

.119 (3.0)

.110 (2.8)

Ideal for Medium Power Amplification and

Switching

.020 (0.5)

Top View

COLLECTOR

.037(0.95)

BASE

EMITTER

.103 (2.6)

.086 (2.2)

.020 (0.5) .020 (0.5)

Dimensions in inches (millimeters)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

Vdc

CEO

CBO

EBO

6.0

Vdc

200

mAdc

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

Derate above 25°C

T = 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

T , T

stg

–55 to +150

Page 1

MDS0306001A

12 3 4 5 6

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