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2N7002PT PDF预览

2N7002PT

更新时间: 2024-01-16 23:52:19
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
5页 135K
描述
N-Channel Enhancement Mode Field Effect Transistor

2N7002PT 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002PT 数据手册

 浏览型号2N7002PT的Datasheet PDF文件第2页浏览型号2N7002PT的Datasheet PDF文件第3页浏览型号2N7002PT的Datasheet PDF文件第4页浏览型号2N7002PT的Datasheet PDF文件第5页 
CHENMKO ENTERPRISE CO.,LTD  
2N7002PT  
SURFACE MOUNT  
N-Channel Enhancement Mode Field Effect Transistor  
VOLTAGE 60 Volts CURRENT 0.250 Ampere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
SOT-23  
FEATURE  
* Small surface mounting type. (SOT-23)  
* High density cell design for low RDS(ON).  
* Suitable for high packing density.  
* Rugged and reliable.  
(1)  
(2)  
* High saturation current capability.  
* Voltage controlled small signal switch.  
(3)  
CONSTRUCTION  
(
)
(
)
.055 1.40  
.028 0.70  
* N-Channel Enhancement  
(
)
(
)
.047 1.20  
.020 0.50  
(
)
.103 2.64  
MARKING  
* 7002  
.086 (2.20)  
D
(3)  
(
)
.045 1.15  
CIRCUIT  
(
)
.033 0.85  
(1)  
G
SOT-23  
Dimensions in inches and (millimeters)  
(2)  
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
2N7002PT  
Symbol  
Parameter  
Units  
VDSS  
Drain-Source Voltage  
60  
60  
V
V
VDGR  
VGSS  
Drain-Gate Voltage (RGS < 1 M  
)
Gate-Source Voltage - Continuous  
±20  
V
- Non Repetitive (tp < 50µs)  
40  
±
TA= 25°C  
250  
190  
ID  
Maximum Drain Current - Continuous  
- Pulsed  
mA  
TA= 70°C  
TA= 25°C  
TA= 70°C  
PD  
Maximum Power Dissipation  
350  
mW  
mW  
°C  
220  
TJ,TSTG  
TL  
Operating and Storage Temperature Range  
-55 to 150  
Maximum Lead Temperature for Soldering  
Purposes, 1/16" from Case for 10 Seconds  
300  
357  
°C  
Thermal characteristics  
R
Thermal Resistance, Junction-to-Ambient  
°C/W  
θJA  
2002-7  

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