2N7002M1PT

更新时间： 2024-01-03 23:25:19

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	170K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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2N7002M1PT 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2N7002M1PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2N7002M1PT

SURFACE MOUNT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.115 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

FBPT-723

FEATURE

* Small surface mounting type. (FBPT-723)

* High density cell design for low RDS(ON).

* Suitable for high packing density.

* Rugged and reliable.

0.5±0.05

1.2±0.05

* High saturation current capability.

* Voltage controlled small signal switch.

0.05±0.04

CONSTRUCTION

0.84±0.05

0.32±0.05

* N-Channel Enhancement

0.15(REF.)

0.47(REF.)

(3)

(1)

(2)

0.23(REF.)

CIRCUIT

0.28±0.05

(1)

0.25±0.05

0.22±0.05

Dimensions in millimeters

FBPT-723

(2)

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

2N7002M1PT

Symbol

Parameter

Units

V_DSS

Drain-Source Voltage

±20

115

V_GSS

Gate-Source Voltage

I_D

Maximum Drain Current - Continuous

P_D

Maximum Power Dissipation

150

T_J,T_STG

T_STG

Operating Temperature Range

Storage Temperature Range

°C

-55 to 150

Thermal characteristics

θJA

Thermal Resistance, Junction-to-Ambient

625

°C/W

2006-12

12 3

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