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CMKD7000 PDF预览

CMKD7000

更新时间: 2024-02-24 22:05:19
品牌 Logo 应用领域
CENTRAL 二极管开关测试光电二极管
页数 文件大小 规格书
2页 143K
描述
SURFACE MOUNT ULTRAmini DUAL PAIR OF SERIES CONFIGURED ULTRA-HIGH SPEED SILICON SWITCHING DIODES

CMKD7000 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.59Is Samacsys:N
最大正向电压 (VF):0.7 V最高工作温度:150 °C
最低工作温度:-65 °C最大功率耗散:0.25 W
最大重复峰值反向电压:100 V最大反向电流:100 µA
最大反向恢复时间:0.004 µs反向测试电压:50 V
子类别:Other Diodes表面贴装:YES
Base Number Matches:1

CMKD7000 数据手册

 浏览型号CMKD7000的Datasheet PDF文件第2页 
TM  
CMKD7000  
Central  
SURFACE MOUNT ULTRAmini™  
DUAL PAIR OF  
Semiconductor Corp.  
SERIES CONFIGURED  
ULTRA-HIGH SPEED  
DESCRIPTION:  
SILICON SWITCHING DIODES  
The CENTRAL SEMICONDUCTOR CMKD7000  
consists of two pair of electrically isolated series  
configured ultra-high speed switching diodes in  
an ULTRAmini™ SOT-363 surface mount pack-  
age, designed for ESD protection and high  
speed switching applications.  
MARKING CODE: K00  
SOT-363 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
V
mA  
mA  
mW  
Peak Repetitive Reverse Voltage  
Average Forward Current  
Peak Forward Current  
Power Dissipation  
V
100  
200  
500  
250  
RRM  
I
I
O
FM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
JA  
-65 to +150  
500  
°C  
°C/W  
J
Θ
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
BV  
TEST CONDITIONS  
I =100µA  
MIN  
TYP  
MAX  
UNITS  
100  
V
R
R
I
I
I
V =50V  
300  
100  
500  
0.70  
0.82  
1.10  
1.5  
nA  
µA  
nA  
V
V
V
R
R
R
R
V =50V, T =125°C  
R
R
A
V =100V  
V
V
V
I =1.0mA  
0.55  
0.67  
0.75  
F
F
F
F
I =10mA  
F
I =100mA  
F
C
V =0, f=1.0 MHz  
pF  
ns  
T
R
t
I =I =10mA, R =100, Rec. to 1.0mA  
2.0  
4.0  
rr  
R
F
L
R1 (13-November 2002)  

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