Datasheet > CBRHD-01TR13

CBRHD-01TR13

更新时间： 2024-02-18 08:48:59

品牌	Logo	应用领域
CENTRAL		光电二极管
页数	文件大小	规格书
2页	645K
描述
Bridge Rectifier Diode, 1 Phase, 0.5A, 100V V(RRM), Silicon, SURFACE MOUNT, PLASTIC, DIP-4

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技术参数
数据手册

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CBRHD-01TR13 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.78
Is Samacsys：	N	配置：	BRIDGE, 4 ELEMENTS
二极管类型：	BRIDGE RECTIFIER DIODE	最大正向电压 (VF)：	1 V
最大非重复峰值正向电流：	30 A	元件数量：	4
最高工作温度：	150 °C	最大输出电流：	0.8 A
最大重复峰值反向电压：	100 V	子类别：	Bridge Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

CBRHD-01TR13 数据手册

CBRHD-01

SURFACE MOUNT

HIGH DENSITY

0.8 AMP

SILICON BRIDGE RECTIFIER

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBRHD-01 is a

silicon full wave bridge rectifier mounted in a durable

epoxy surface mount molded case, utilizing glass

passivated chips.

MARKING CODE: CBD1

FEATURES:

• Efficient use of board space: requires only 42mm²of board

space vs. 120mm²of board space needed for industry

standard 1.0 Amp surface mount bridge rectifier.

• 50% higher density (Amps/mm²) than the industry standard

1.0 Amp surface mount bridge rectifier.

HD DIP CASE

• This series is UL listed: file number E130224

• Glass passivated chips for high reliability.

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

100

RRM

DC Blocking Voltage

100

RMS Reverse Voltage

R(RMS)

Average Forward Current (T =40°C) (Note1)

0.5

Average Forward Current (T =40°C) (Note 2)

0.8

Peak Forward Surge Current

FSM

T , T

Operating and Storage Junction Temperature

Thermal Resistance (Note 3)

-65 to +150

°C

°C/W

stg

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V = 100V

TYP

MAX

5.0

UNITS

µA

V = 100V, T =125°C

500

1.0

µA

I =400mA

V =4.0V, f=1.0MHz

9.0

Notes: (1) Mounted on Glass-Epoxy PCB.

(2) Mounted on Ceramic PCB.

(3) Mounted on PCB with 0.5” x 0.5” copper pads.

R2 (4-January 2010)

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