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2N7002LEADFREE PDF预览

2N7002LEADFREE

更新时间: 2024-01-01 00:41:41
品牌 Logo 应用领域
CENTRAL 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 83K
描述
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

2N7002LEADFREE 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002LEADFREE 数据手册

 浏览型号2N7002LEADFREE的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
2N7002  
S e m ic o n d u c t o r Co r p .  
N-CHANNEL  
ENHANCEMENT-MODE  
MOSFET  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N7002  
type is a N-Channel Field Effect Transistor,  
manufactured by the N-Channel DMOS  
Process, designed for high speed pulsed  
amplifier and driver applications.  
Marking Code is 702.  
SOT-23 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
V
V
Drain-Source Voltage  
Drain-Gate Voltage  
Gate-Source Voltage  
Continuous Drain Current (T =25 C)  
Continuous Drain Current (T =100 C)  
C
V
V
V
I
60  
60  
40  
115  
75  
115  
800  
800  
350  
DS  
DG  
GS  
V
o
mA  
mA  
mA  
mA  
mA  
mW  
C
D
o
I
I
I
I
D
S
DM  
SM  
D
Continuous Source Current (Body Diode)  
Maximum Pulsed Drain Current  
Maximum Pulsed Source Current  
Power Dissipation  
P
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
J stg  
JA  
-55 to +150  
357  
C
C/W  
o
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
100  
-100  
1.0  
UNITS  
nA  
nA  
µA  
µA  
mA  
V
I
I
I
I
V
V
V
V
V
=20V  
=-20V  
GSSF  
GSSR  
DSS  
DSS  
D(ON)  
DSS  
GS(th)  
GS  
GS  
DS  
DS  
DS  
=60V, V =0  
=60V, V =0, T =125 C  
GS  
GS  
o
500  
A
I
2V  
, V =10V  
500  
60  
1.0  
DS(ON) GS  
BV  
V
V
V
I =10µA  
105  
2.1  
D
V
V
V
V
=V , I =250µA  
2.5  
3.75  
1.5  
V
V
V
DS GS D  
=10V, I =500mA  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
D
=5.0V, I =50mA  
D
r
=10V, I =500mA  
D
3.7  
7.5  
DS(ON)  
56  

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