2N7002

更新时间： 2024-02-21 18:34:59

品牌	Logo	应用领域
CENTRAL		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	83K
描述
N-CHANNEL ENHANCEMENT-MODE MOSFET

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技术参数
数据手册

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2N7002 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002 数据手册

Ce n t r a l

2N7002

S e m ic o n d u c t o r Co r p .

N-CHANNEL

ENHANCEMENT-MODE

MOSFET

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N7002

type is a N-Channel Field Effect Transistor,

manufactured by the N-Channel DMOS

Process, designed for high speed pulsed

amplifier and driver applications.

Marking Code is 702.

SOT-23 CASE

MAXIMUM RATINGS (T =25 C)

SYMBOL

UNITS

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current (T =25 C)

Continuous Drain Current (T =100 C)

115

800

350

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

J stg

-55 to +150

357

C/W

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

100

-100

1.0

UNITS

µA

=20V

=-20V

GSSF

GSSR

DSS

D(ON)

DSS

GS(th)

=60V, V =0

=60V, V =0, T =125 C

500

≥ 2V

, V =10V

500

1.0

DS(ON) GS

I =10µA

105

2.1

=V , I =250µA

2.5

3.75

1.5

Ω

DS GS D

=10V, I =500mA

DS(ON)

=5.0V, I =50mA

=10V, I =500mA

3.7

7.5

DS(ON)

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