TM
2N6071, A, B
2N6073, A, B
2N6075, A, B
Central
Semiconductor Corp.
SENSITIVE GATE TRIAC
4.0 AMPS, 200 THRU 600 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B
series types are silicon sensitive gate triacs
designed for such applications as light dimmers,
motor controls, heating controls and power
supplies.
MARKING CODE: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
2N6071
2N6071A
2N6071B
2N6073
2N6075
J
2N6073A
2N6075A
SYMBOL
2N6073B
2N6075B
UNITS
V
A
Peak Repetitive Off-State Voltage
RMS On-State Current (T =85°C)
V
V
200
400
4.0
30
3.7
10
0.5
5.0
600
DRM, RRM
I
I
C
T(RMS)
TSM
Peak One Cycle Surge (60Hz, T =110°C)
A
J
I2t Value for Fusing (t=8.3ms)
I2t
A2s
W
Peak Gate Power (T =85°C)
P
P
V
C
GM
G(AV)
GM
stg
Average Gate Power (t=8.3ms, T =85°C)
W
V
°C
°C
°C/W
°C/W
°C
C
Peak Gate Voltage (T =85°C)
C
Storage Temperature
Junction Temperature
Thermal Resistance
T
T
-40 to +150
-40 to +110
3.5
J
Θ
Θ
JC
JA
L
Thermal Resistance
Maximum Lead Temperature
75
T
260
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
A Series
B Series
SYMBOL
TEST CONDITIONS
TYP MAX
TYP MAX
10
TYP MAX
10
UNITS
µA
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=Rated V
=Rated V
V T =25°C
10
DRM, RRM
DRM, RRM
D
D
DRM, RRM, J
I
V T =110°C
DRM, RRM, J
2.0
30
-
30
-
60
-
60
-
2.0
5.0
5.0
5.0
10
20
20
20
30
2.0
3.0
3.0
3.0
5.0
15
15
15
20
15
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
=12V, R =100Ω, QUAD I, T =25°C
GT
GT
GT
GT
GT
GT
GT
GT
H
D
L
L
L
L
L
L
L
L
T
T
L
L
J
J
J
J
J
J
J
J
=12V, R =100Ω, QUAD II, T =25°C
D
D
=12V, R =100Ω, QUAD III, T =25°C
=12V, R =100Ω, QUAD IV, T =25°C
D
=12V, R =100Ω, QUAD I, T = -40°C
D
=12V, R =100Ω, QUAD II, T = -40°C
D
D
=12V, R =100Ω, QUAD III, T = -40°C
=12V, R =100Ω, QUAD IV, T = -40°C
D
=12V, I =1.0A, T =25°C
30
70
15
30
D
J
J
J
J
=12V, I =1.0A, T = -40°C
30
H
D
V
V
V
=12V, R =100Ω, T =25°C, QUAD I, II, III, IV
2.0
2.5
2.0
1.5
5.0
2.0
2.5
2.0
1.5
5.0
2.0
2.5
2.0
1.5
5.0
GT
GT
TM
D
=12V, R =100Ω, T = -40°C, QUAD I, II, III, IV
V
V
µs
V/µs
D
I
I
V
=6.0A
=14A, I =100mA
= Rated V
TM
TM
D
t
on
dv/dt
GT
, I =5.7A, T =85°C
DRM TM
J
R0 (27-April 2004)