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2N6071 PDF预览

2N6071

更新时间: 2024-01-11 02:01:37
品牌 Logo 应用领域
CENTRAL 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
2页 83K
描述
SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS

2N6071 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.63
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLE最大直流栅极触发电流:30 mA
最大直流栅极触发电压:2.5 V最大维持电流:30 mA
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:4 A重复峰值关态漏电流最大值:10 µA
断态重复峰值电压:200 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

2N6071 数据手册

 浏览型号2N6071的Datasheet PDF文件第2页 
TM  
2N6071, A, B  
2N6073, A, B  
2N6075, A, B  
Central  
Semiconductor Corp.  
SENSITIVE GATE TRIAC  
4.0 AMPS, 200 THRU 600 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6071, A, B  
series types are silicon sensitive gate triacs  
designed for such applications as light dimmers,  
motor controls, heating controls and power  
supplies.  
MARKING CODE: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
2N6071  
2N6071A  
2N6071B  
2N6073  
2N6075  
J
2N6073A  
2N6075A  
SYMBOL  
2N6073B  
2N6075B  
UNITS  
V
A
Peak Repetitive Off-State Voltage  
RMS On-State Current (T =85°C)  
V
V
200  
400  
4.0  
30  
3.7  
10  
0.5  
5.0  
600  
DRM, RRM  
I
I
C
T(RMS)  
TSM  
Peak One Cycle Surge (60Hz, T =110°C)  
A
J
I2t Value for Fusing (t=8.3ms)  
I2t  
A2s  
W
Peak Gate Power (T =85°C)  
P
P
V
C
GM  
G(AV)  
GM  
stg  
Average Gate Power (t=8.3ms, T =85°C)  
W
V
°C  
°C  
°C/W  
°C/W  
°C  
C
Peak Gate Voltage (T =85°C)  
C
Storage Temperature  
Junction Temperature  
Thermal Resistance  
T
T
-40 to +150  
-40 to +110  
3.5  
J
Θ
Θ
JC  
JA  
L
Thermal Resistance  
Maximum Lead Temperature  
75  
T
260  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
A Series  
B Series  
SYMBOL  
TEST CONDITIONS  
TYP MAX  
TYP MAX  
10  
TYP MAX  
10  
UNITS  
µA  
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=Rated V  
=Rated V  
V T =25°C  
10  
DRM, RRM  
DRM, RRM  
D
D
DRM, RRM, J  
I
V T =110°C  
DRM, RRM, J  
2.0  
30  
-
30  
-
60  
-
60  
-
2.0  
5.0  
5.0  
5.0  
10  
20  
20  
20  
30  
2.0  
3.0  
3.0  
3.0  
5.0  
15  
15  
15  
20  
15  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
V
=12V, R =100Ω, QUAD I, T =25°C  
GT  
GT  
GT  
GT  
GT  
GT  
GT  
GT  
H
D
L
L
L
L
L
L
L
L
T
T
L
L
J
J
J
J
J
J
J
J
=12V, R =100Ω, QUAD II, T =25°C  
D
D
=12V, R =100Ω, QUAD III, T =25°C  
=12V, R =100Ω, QUAD IV, T =25°C  
D
=12V, R =100Ω, QUAD I, T = -40°C  
D
=12V, R =100Ω, QUAD II, T = -40°C  
D
D
=12V, R =100Ω, QUAD III, T = -40°C  
=12V, R =100Ω, QUAD IV, T = -40°C  
D
=12V, I =1.0A, T =25°C  
30  
70  
15  
30  
D
J
J
J
J
=12V, I =1.0A, T = -40°C  
30  
H
D
V
V
V
=12V, R =100Ω, T =25°C, QUAD I, II, III, IV  
2.0  
2.5  
2.0  
1.5  
5.0  
2.0  
2.5  
2.0  
1.5  
5.0  
2.0  
2.5  
2.0  
1.5  
5.0  
GT  
GT  
TM  
D
=12V, R =100Ω, T = -40°C, QUAD I, II, III, IV  
V
V
µs  
V/µs  
D
I
I
V
=6.0A  
=14A, I =100mA  
= Rated V  
TM  
TM  
D
t
on  
dv/dt  
GT  
, I =5.7A, T =85°C  
DRM TM  
J
R0 (27-April 2004)  

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