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2N3905APMPBFREE PDF预览

2N3905APMPBFREE

更新时间: 2024-01-29 06:48:22
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管
页数 文件大小 规格书
2页 318K
描述
Transistor,

2N3905APMPBFREE 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.68基于收集器的最大容量:4.5 pF
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):260 nsVCEsat-Max:0.4 V
Base Number Matches:1

2N3905APMPBFREE 数据手册

 浏览型号2N3905APMPBFREE的Datasheet PDF文件第2页 
2N3905  
2N3906  
www.centralsemi.com  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR 2N3905 and  
2N3906 types are PNP silicon transistors designed for  
general purpose amplifier and switching applications.  
NPN complementary types are 2N3903 and 2N3904.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
40  
40  
5.0  
200  
625  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
mA  
mW  
°C  
I
C
P
D
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
J
stg  
Thermal Resistance  
Θ
200  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
2N3905  
2N3906  
A
SYMBOL  
TEST CONDITIONS  
=30V, V =3.0V  
MIN  
MAX  
50  
MIN  
-
MAX  
50  
UNITS  
nA  
I
V
-
CEV  
CE  
I =10μA  
EB  
BV  
BV  
BV  
40  
40  
5.0  
-
-
-
-
40  
40  
5.0  
-
-
-
-
V
V
V
V
V
V
V
CBO  
CEO  
EBO  
C
I =1.0mA  
C
I =10μA  
E
V
V
V
V
I =10mA, I =1.0mA  
0.25  
0.4  
0.85  
0.95  
-
0.25  
0.4  
0.85  
0.95  
-
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
C
B
B
B
B
I =50mA, I =5.0mA  
-
-
I =10mA, I =1.0mA  
0.65  
-
0.65  
-
C
I =50mA, I =5.0mA  
C
h
h
h
h
h
h
V
=1.0V, I =0.1mA  
30  
40  
50  
30  
15  
50  
200  
-
60  
80  
100  
60  
30  
100  
250  
-
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
CE  
C
V
V
V
V
V
V
V
V
V
=1.0V, I =1.0mA  
-
-
FE  
FE  
FE  
FE  
C
=1.0V, I =10mA  
150  
-
300  
-
C
=1.0V, I =50mA  
C
=1.0V, I =100mA  
-
-
C
=10V, I =1.0mA, f=1.0kHz  
200  
-
4.5  
10  
400  
-
4.5  
10  
fe  
C
f
=20V, I =10mA, f=100MHz  
MHz  
pF  
pF  
T
C
C
C
NF  
=5.0V, I =0, f=100kHz  
ob  
ib  
E
=0.5V, I =0, f=100kHz  
-
-
C
=5.0V, I =100μA, R =1.0kΩ  
C S  
f=10Hz to 15.7kHz  
=3.0V, V  
-
5.0  
-
4.0  
dB  
t
V
=0.5V, I =10mA  
BE(OFF) C  
on  
off  
CC  
=1.0mA  
I
V
-
-
70  
260  
-
-
70  
300  
ns  
ns  
B1  
CC  
t
=3.0V, I =10mA, I =I =1.0mA  
B1 B2  
C
R2 (17-October 2011)  

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