是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | 风险等级: | 5.38 |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | JEDEC-95代码: | TO-18 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 350 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N2503 | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 50V V(RRM), 1 Element, TO-93 |
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2N2503E3 | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 50V V(RRM), 1 Element, TO-93 |
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2N2504 | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 100V V(RRM), 1 Element, TO-93 |
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2N2504E3 | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 100V V(RRM), 1 Element, TO-93 |
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2N2505 | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 200V V(RRM), 1 Element, TO-93 |
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2N2505E3 | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 200V V(RRM), 1 Element, TO-93 |
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