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CSC2712BLL PDF预览

CSC2712BLL

更新时间: 2024-02-17 23:07:17
品牌 Logo 应用领域
CDIL 晶体晶体管局域网
页数 文件大小 规格书
3页 41K
描述
SILICON PLANAR EPITAXIAL TRANSISTOR

CSC2712BLL 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.74
Is Samacsys:N最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

CSC2712BLL 数据手册

 浏览型号CSC2712BLL的Datasheet PDF文件第2页浏览型号CSC2712BLL的Datasheet PDF文件第3页 
IS / IECQC 700000  
IS / IECQC 750100  
IS/ISO 9002  
Lic# QSC/L- 000019.2  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
SOT-23 Formed SMD Package  
CSC2712  
SILICON PLANAR EPITAXIAL TRANSISTOR  
N-P-N transistor  
Marking  
PACKAGE OUTLINE DETAILS  
ALL DIMENSIONS IN mm  
CSC2712Y=1E  
CSC2712GR(G)=1F  
CSC2712BL(L)=1G  
Pin configuration  
1 = BASE  
2 = EMITTER  
3 = COLLECTOR  
ABSOLUTE MAXIMUM RATINGS  
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
Emitter-base voltage (open collector)  
Collector current (peak value)  
V
V
V
max.  
max.  
max.  
max.  
max.  
max.  
60 V  
50 V  
5 V  
150 mA  
150 mW  
150 ° C  
CBO  
CEO  
EBO  
I
C
Total power dissipation at T  
Junction temperature  
D.C. current gain  
= 25°C  
P
amb  
tot  
T
j
–I = 2 mA; –V  
C
= 6V  
h
min.  
70  
CE  
FE  
max.  
700  
Transition frequency  
I
= 1 mA; V  
= 10 V  
f
min.  
max  
80 MHz  
10 dB  
C
CE  
T
Noise figure at R = 10 KW  
S
I
C
= 0.1 mA; V = 6V;  
CE  
f = 1 kHz  
F
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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