5秒后页面跳转
CSA1013O PDF预览

CSA1013O

更新时间: 2024-01-23 16:40:26
品牌 Logo 应用领域
CDIL 晶体晶体管局域网
页数 文件大小 规格书
2页 44K
描述
PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS

CSA1013O 技术参数

是否Rohs认证:不符合生命周期:Contact Manufacturer
零件包装代码:TO-237包装说明:CYLINDRICAL, O-PBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.83Is Samacsys:N
最大集电极电流 (IC):1 A基于收集器的最大容量:35 pF
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):160JEDEC-95代码:TO-237AA
JESD-30 代码:O-PBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:1.5 VBase Number Matches:1

CSA1013O 数据手册

 浏览型号CSA1013O的Datasheet PDF文件第2页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
IS / IECQC 700000  
IS / IECQC 750100  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS  
CSA1013 (PNP)  
CSC2383 (NPN)  
TO-237  
BCE  
Vertical Deflection Output & Class B Sound Output Applications of Colour T.V  
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified )  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
160  
160  
UNIT  
V
V
V
A
Collector -Base Voltage  
Collector -Emitter Voltage  
Emitter Base Voltage  
Collector Current  
6.0  
1.0  
Base Current  
IB  
PC  
Tj, Tstg  
500  
900  
-55 to +150  
mA  
mW  
deg C  
Collector Power Dissipation  
Operating And Storage Junction  
Temperature Range  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
160  
-
-
60  
-
TYP  
MAX  
-
UNIT  
V
uA  
Collector -Emitter Voltage  
Collector Cut off Current  
Emitter Cut off Current  
DC Current Gain  
Collector Emitter Saturation Voltage  
Base Emitter on Voltage  
VCEO  
ICBO  
IEBO  
hFE*  
IC=10mA, IB=0  
VCB=150V, IE=0  
VEB=6V, IC=0  
-
-
-
-
-
-
1.0  
1.0  
320  
1.5  
0.75  
uA  
IC=200mA,VCE=5V  
VCE(Sat) * IC=500mA,IB=50mA  
VBE(on)* IC=5mA, VCE=5V  
V
V
0.45  
Dynamic Characteristics  
Output Capacitance  
Cob NPN VCB=10V, IE=0,  
-
-
20  
pF  
f=1MHz  
PNP  
NPN VCE=5V,IC=200mA,  
PNP  
-
20  
15  
-
35  
-
-
pF  
MHz  
MHz  
Gain Bandwidth Product  
ft  
100  
50  
CLASSIFICATION  
hFE *  
R
O
Y
60-120  
100-200  
160-320  
*Pulse Test : Pulse Width =300us, Duty Cycle=2%  
Continental Device India Limited  
Page 1 of 2  
Data Sheet  

与CSA1013O相关器件

型号 品牌 描述 获取价格 数据表
CSA1013R CDIL PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS

获取价格

CSA1013Y CDIL PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS

获取价格

CSA1015 CDIL PNP EPITAXIAL PLANAR SILICON TRANSISTOR

获取价格

CSA1015GR CDIL PNP EPITAXIAL PLANAR SILICON TRANSISTOR

获取价格

CSA1015O CDIL PNP EPITAXIAL PLANAR SILICON TRANSISTOR

获取价格

CSA1015Y CDIL PNP EPITAXIAL PLANAR SILICON TRANSISTOR

获取价格