Datasheet > CMBTA44

CMBTA44

更新时间： 2024-02-20 22:28:48

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页数	文件大小	规格书
3页	176K
描述
NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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技术参数
数据手册

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CMBTA44 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

CMBTA44 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CMBTA44

PIN CONFIGURATION (NPN)

1 = BASE

SOT-23

2 = EMITTER

Formed SMD Package

3 = COLLECTOR

Marking Code is =3Z

Designed for Extremely High Voltage Applications

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)

VALUE

450

400

DESCRIPTION

SYMBOL

V_CBO

UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CEO

V_EBO

I_C

300

350

P_D

Collector Power Dissipation

Operating And Storage Junction

Temperature Range

T_j,T_stg

- 65 to+150

ºC

THERMAL RESISTANCE

R_th(j-a)

357

Junction to Ambient in free air

ºC/W

Electrical Characterstics (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

I_CBO

CONDITIONS

MIN

TYP

MAX

100

500

100

UNIT

V_CB=400V, I_E=0

Collector Cut Off Current

Emitter Cut Off Current

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

I_CES

V_CE=400V, V_BE=0

V_EB=4V, I_C=0

I_EBO

V_CBO

V_CES

V_CEO

V_EBO

I_C=100mA, I_E=0

I_C=100mA, V_BE=0

I_C=1mA, I_B=0

450

400

I_E=10mA, I_C=0

I_C=1mA, I_B=0.1mA

0.40

Collector Emitter Saturation

Voltage

V_CE(sat)

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

0.50

0.75

V_BE(sat)

h_FE

I_C=10mA, I_B=1mA

Base Emitter Saturation Voltage

DC Current Gain

0.75

V_CE=10V, I_C=1mA

_CE=10V, I_C=10mA

200

V_CE=10V, I_C=50mA

V_CE=10V, I_C=100mA

f_T

V_CE=10V, I_C=10mA, f=10MHz

V_CB=20V, I_E=0, f=1MHz

V_EB=0.5V, Ic=0, f=1MHz

Transition Frequency

Output Capacitance

Input Capacitance

MHz

C_ob

C_ib

7.0

130

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

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