CLLDB3

更新时间： 2024-01-09 01:24:26

品牌	Logo	应用领域
CDIL		二极管装置双向触发二极管数据判读及分析中心
页数	文件大小	规格书
4页	199K
描述
SILICON DIAC BIDIRECTIONAL TRIGGER DIODE GLASS PASSIVATED PNPN DEVICE

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技术参数
数据手册

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CLLDB3 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.62	Is Samacsys：	N
Base Number Matches：	1

CLLDB3 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

SILICON DIAC

CLLDB3

BIDIRECTIONAL TRIGGER DIODE

GLASS PASSIVATED PNPN DEVICE

SOD - 80C

Mini MELF (LL-34)

Functioning as a Trigger Diode with a Fixed Voltage Reference, CLLDB3 can be

used in Conjunction with Triacs for Simplified Gate Control Circuits or as a Starting

Element in Fluorescent Lamp Ballasts

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise))

DESCRIPTION

SYMBOL

P_tot

VALUE

150

UNIT

Power Dissipation on Printed Circuit (L=10mm) (T_a=50^oC)

Up to T_a= 50^oC and Mounted on a Ceramic Substrate of 10mm x

10mm x 0.6mm

P_tot

120

I_TRM

Repetitive Peak on-State Current (t_p=20ms, f=100Hz)

T_stg

T_j

Storage Temperature Range

Junction Temperature Range

- 40 to +125

- 40 to +110

ºC

THERMAL RESISTANCE

Junction to Ambient in free air

Junction-Leads

R_th(j-a)

R_th(j-l)

400

150

ºC/W

ELECTRICAL CHARACTERISTICS (T_j=25ºC unless specified otherwise)

DESCRIPTION

TEST CONDITIONS

SYMBOL

MIN

MAX

UNIT

V_BO

** C = 22nF

* Breakover Voltage

see diagram 1

** C = 22nF

[I+V_BOI-I-V_BOI]

Breakover Voltage Symmetry

* Dynamic Breakover Voltage

+ 3

see diagram 1

D1=[I_BOto I_F=10mA]

see diagram 1

see diagram 2

** C = 22nF

IDV+ I

V_O

I_BO

t_r

* Output Voltage

* Breakover Current

* Rise Time

see diagram 3

V_B= 0.5 V_BOmax

see diagram 1

TYP 1.5

I_B

* Leakage Current

* Electrical characteristic applicable in both forward and reverse directions

** Connected in parallel with the devices.

Data Sheet

Page 1 of 43

Continental Device India Limited

12 3 4

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