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3N191 PDF预览

3N191

更新时间: 2022-11-26 14:05:55
品牌 Logo 应用领域
CALOGIC 放大器
页数 文件大小 规格书
2页 31K
描述
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

3N191 数据手册

 浏览型号3N191的Datasheet PDF文件第2页 
Dual P-Channel  
Enhancement Mode MOSFET  
General Purpose Amplifier  
CORPORATION  
3N190 / 3N191  
FEATURES  
ABSOLUTE MAXIMUM RATINGS  
(TA = 25oC unless otherwise specified)  
Very High Input Impedance  
High Gate Breakdown 3N190-3N191  
Low Capacitance  
Drain-Source or Drain-Gate Voltage (Note 1)  
3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
Transient Gate-Source Voltage (Note 1 and 2). . . . . . . ±125V  
Gate-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V  
Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Storage Temperature. . . . . . . . . . . . . . . . . . . -65oC to +200oC  
Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC  
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC  
Power Dissipation  
PIN CONFIGURATION  
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW  
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW  
Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/oC  
TO-99  
NOTE: Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections  
of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
D2  
S2  
G2  
G1  
ORDERING INFORMATION  
C
D1  
S1  
2506  
Part  
Package  
Temperature Range  
3N190-91 Hermetic TO-99  
X3N190-91 Sorted Chips in Carriers  
-55oC to +150oC  
-55oC to +150oC  
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)  
3N190/91  
SYMBOL  
IGSSR  
PARAMETER  
Gate Reverse Current  
UNITS  
TEST CONDITIONS  
MIN  
MAX  
10  
VGS = 40V  
GS = -40V  
pA  
V
-10  
-25  
IGSSF  
Gate Forward Current  
TA = +125oC  
BVDSS  
BVSDS  
Drain-Source Breakdown Voltage  
Source-Drain Breakdown Voltage  
ID = -10µA  
-40  
-40  
IS = -10µA, VBD = 0  
V
DS = -15V, ID = -10µA  
-2.0  
-2.0  
-3.0  
-5.0  
-5.0  
VGS(th)  
Threshold Voltage  
V
VDS = VGS, ID = -10µA  
VDS = -15V, ID = -500µA  
VDS = -15V  
VGS  
Gate Source Voltage  
-6.5  
IDSS  
Zero Gate Voltage Drain Current  
Source Drain Current  
-200  
-400  
300  
ISDS  
VSD = -15V, VDB = 0  
VDS = -20V, ID = -100µA  
VDS = -15V, VGS = -10V  
rDS(on)  
ID(on)  
Drain-Source on Resistance  
On Drain Current  
ohms  
mA  
-5.0  
-30.0  

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