Datasheet > 3N172-73

3N172-73

更新时间： 2022-11-25 19:10:22

品牌	Logo	应用领域
CALOGIC		二极管开关放大器
页数	文件大小	规格书
2页	37K
描述
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch

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3N172-73 数据手册

Diode Protected P-Channel

Enhancement Mode MOSFET

General Purpose Amplifier/Switch

CORPORATION

3N172 / 3N173

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise specified)

High Input Impedance

Diode Protected Gate

•

Drain-Source or Drain-Gate Voltage

•

3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA

Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA

Storage Temperature . . . . . . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature . . . . . . . . . . . . . . . . . -55^oC to +150^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/^oC

PIN CONFIGURATION

TO-72

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

C,B

1503Z

ORDERING INFORMATION

DEVICE SCHEMATIC

Part

Package

Temperature Range

3N172-73

X3N172-73 Sorted Chips in Carriers

Hermetic TO-72

-55^oC to +150^oC

0200

ELECTRICAL CHARACTERISTICS (T_A= 25^oC and V_BS= 0 unless otherwise specified)

3N172

3N173

MAX

SYMBOL

PARAMETER

UNITS

TEST CONDITIONS

V_GS= -20V

MIN

MAX

MIN

-200

-0.5

-500

-1.0

I_GSS

Gate Reverse Current

T_A= +125^oC

µA

BV_GSS

BV_DSS

BV_SDS

Gate Breakdown Voltage

-40

-125

-30

-125

I_D= -10µA

Drain-Source Breakdown Voltage

Source-Drain Breakdown Voltage

I_D= -10µA

I_S= -10µA, V_DB= 0

-40

-30

-2.0

-3.0

-5.0

-6.5

-0.4

250

-30

-2.0

-2.5

-5.0

-6.5

-10

350

-30

V_DS= V_GS, I_D= -10µA

V_GS(th)

Threshold Voltage

V_DS= -15V, I_D= -10µA

V_DS= -15V, I_D= -500µA

V_DS= -15V, V_GS= 0

V_GS

Gate Source Voltage

I_DSS

Zero Gate Voltage Drain Current

Zero Gate Voltage Source Current

Drain Source On Resistance

On Drain Current

I_SDS

V_SD= -15V, V_DB= 0, V_GD= 0

V_GS= -20V, I_D= -100µA

V_DS= -15V, V_GS= -10V

r_DS(on)

I_D(on)

ohms

-5.0

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