3N164

更新时间： 2024-01-23 11:56:53

品牌	Logo	应用领域
CALOGIC		晶体开关放大器晶体管输入元件
页数	文件大小	规格书
2页	32K
描述
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch

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技术参数
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3N164 技术参数

生命周期：	Active	零件包装代码：	TO-72
包装说明：	HERMETIC SEALED PACAKGE-4	针数：	4
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

3N164 数据手册

P-Channel Enhancement Mode

MOSFET General Purpose

Amplifier Switch

CORPORATION

3N163 / 3N164

FEATURES

ABSOLUTE MAXIMUM RATINGS (Note 1)

(T_A= 25^oC unless otherwise specified)

Very High Input Impedance

High Gate Breakdown

Fast Switching

•

Drain-Source or Drain-Gate Voltage

•

3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V

3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V

Static Gate-Source Voltage

Low Capacitance

•

3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V

3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V

Transient Gate-Source Voltage (Note 2) . . . . . . . . . . . . ±125V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Storage Temperature. . . . . . . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature . . . . . . . . . . . . . . . . . -55^oC to +150^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW

Derate above +25^oC . . . . . . . . . . . . . . . . . . . . . . 3.0mW/^oC

PIN CONFIGURATION

TO-72

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

1503

Part

Package

Temperature Range

3N163-64

X3N163-64 Sorted Chips in Carriers

Hermetic TO-72

-55^oC to +150^oC

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

3N163

3N164

SYMBOL

PARAMETER

UNITS

TEST CONDITIONS

MIN MAX MIN MAX

V_GS= -40V, V_DS= 0 (3N163)

_GS= -30V, V_DS= 0 (3N164)

-10

-25

-10

-25

I_GSS

Gate-Body Leakage Current

T_A= +125^oC

BV_DSS

BV_SDS

V_GS(th)

V_GS

Drain-Source Breakdown Voltage

Source-Drain Breakdown Voltage

Threshold Voltage

-40

-30

I_D= -10µA, V_GS= 0

I_S= -10µA, V_GD= 0, V_BD= 0

V_DS= V_GS, I_D= -10µA

V_DS= -15V, I_D= -10µA

V_DS= -15V, I_D= -0.5mA

V_DS= -15V, V_GS= 0

-2.0 -5.0 -2.0 -5.0

-2.5 -6.5 -2.5 -6.5

Threshold Voltage

Gate Source Voltage

I_DSS

Zero Gate Voltage Drain Current

Source Drain Current

200

400

250

400

800

I_SDS

V_SD= 15V, V_GS= V_DB= 0

V_GS= -20V, I_D= -100µA

V_DS= +15V, V_GS= -10V

r_DS(on)

I_D(on)

Drain-Source on Resistance

On Drain Current

300 ohms

-5.0 -30.0 -3.0 -30.0

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与3N164相关器件

型号	品牌	描述	获取价格	数据表
3N164_TO-72	MICROSS	an enhancement mode P-Channel Mosfet	获取价格
3N164-1	VISHAY	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Meta	获取价格
3N164-2	VISHAY	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, P-Channel, Silicon, Meta	获取价格
3N164-SOT-143-4L	Linear	Transistor,	获取价格
3N165	NJSEMI	(SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT	获取价格
3N165	INTERSIL	N-CHANNEL JFET	获取价格

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