N-Channel Enhancement Mode
MOSFET General Purpose
Amplifier/Switch
CORPORATION
2N4351
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
Low ON Resistance
Low Capacitance
High Gain
High Gate Breakdown Voltage
•
Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC
•
•
•
Low Threshold Voltage
•
PIN CONFIGURATION
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TO-72
ORDERING INFORMATION
Part
Package
Temperature Range
2N4351
Hermetic TO-72
-55oC to +150oC
X2N4351 Sorted Chips in Carriers
-55oC to +150oC
C
D
S
G
1003
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
BVDSS
IGSS
PARAMETER
Drain-Source Breakdown Voltage
Gate Leakage Current
MIN
MAX
UNITS
V
TEST CONDITIONS
ID = 10µA, VGS = 0
25
10
10
5
pA
VGS = ±30V, VDS = 0
VDS = 10V, VGS = 0
VDS = 10V, ID = 10µA
IDSS
Zero-Gate-Voltage Drain Current
Gate-Source Threshold Voltage
"ON" Drain Current
nA
VGS(th)
ID(on)
VDS(on)
rDS(on)
1
3
V
mA
V
VGS = 10V, VDS = 10V
Drain-Source "ON" Voltage
Drain-Source Resistance
Forward Transfer Admittance
Reverse Transfer Capacitance (Note 2)
Input Capacitance (Note 2)
Drain-Substrate Capacitance (Note 2)
Turn-On Delay (Note 2)
1
ID = 2mA, VGS = 10V
300
ohms
µS
VGS = 10V, ID = 0, f = 1kHz
VDS = 10V, ID = 2mA, f = 1kHz
VDS = 0, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
VD(SUB) = 10V, f = 1MHz
| yfs
Crss
Ciss
|
1000
1.3
5.0
5.0
45
pF
Cd(sub)
td(on)
tr
Rise Time (Note 2)
65
ns
td(off)
tf
Turn-Off Delay (Note 2)
60
Fall Time (Note 2)
100
NOTES: 1. Device must not be tested at ±125V more than once or longer than 300ms.
2. For design reference only, not 100% tested.