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2N4351 PDF预览

2N4351

更新时间: 2024-02-28 10:03:57
品牌 Logo 应用领域
CALOGIC 晶体开关放大器晶体管
页数 文件大小 规格书
1页 22K
描述
N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch

2N4351 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:BCY包装说明:TO-72, CASE 20-03, 4 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.32
Is Samacsys:N配置:Single
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):0.03 A
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-72
JESD-30 代码:O-MBCY-W4JESD-609代码:e0
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2N4351 数据手册

  
N-Channel Enhancement Mode  
MOSFET General Purpose  
Amplifier/Switch  
CORPORATION  
2N4351  
FEATURES  
ABSOLUTE MAXIMUM RATINGS  
(TA = 25oC unless otherwise noted)  
Low ON Resistance  
Low Capacitance  
High Gain  
High Gate Breakdown Voltage  
Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V  
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V  
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA  
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC  
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW  
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC  
Low Threshold Voltage  
PIN CONFIGURATION  
NOTE: Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections  
of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TO-72  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
2N4351  
Hermetic TO-72  
-55oC to +150oC  
X2N4351 Sorted Chips in Carriers  
-55oC to +150oC  
C
D
S
G
1003  
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)  
SYMBOL  
BVDSS  
IGSS  
PARAMETER  
Drain-Source Breakdown Voltage  
Gate Leakage Current  
MIN  
MAX  
UNITS  
V
TEST CONDITIONS  
ID = 10µA, VGS = 0  
25  
10  
10  
5
pA  
VGS = ±30V, VDS = 0  
VDS = 10V, VGS = 0  
VDS = 10V, ID = 10µA  
IDSS  
Zero-Gate-Voltage Drain Current  
Gate-Source Threshold Voltage  
"ON" Drain Current  
nA  
VGS(th)  
ID(on)  
VDS(on)  
rDS(on)  
1
3
V
mA  
V
VGS = 10V, VDS = 10V  
Drain-Source "ON" Voltage  
Drain-Source Resistance  
Forward Transfer Admittance  
Reverse Transfer Capacitance (Note 2)  
Input Capacitance (Note 2)  
Drain-Substrate Capacitance (Note 2)  
Turn-On Delay (Note 2)  
1
ID = 2mA, VGS = 10V  
300  
ohms  
µS  
VGS = 10V, ID = 0, f = 1kHz  
VDS = 10V, ID = 2mA, f = 1kHz  
VDS = 0, VGS = 0, f = 1MHz  
VDS = 10V, VGS = 0, f = 1MHz  
VD(SUB) = 10V, f = 1MHz  
| yfs  
Crss  
Ciss  
|
1000  
1.3  
5.0  
5.0  
45  
pF  
Cd(sub)  
td(on)  
tr  
Rise Time (Note 2)  
65  
ns  
td(off)  
tf  
Turn-Off Delay (Note 2)  
60  
Fall Time (Note 2)  
100  
NOTES: 1. Device must not be tested at ±125V more than once or longer than 300ms.  
2. For design reference only, not 100% tested.  

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