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2FAF-M8R PDF预览

2FAF-M8R

更新时间: 2024-01-20 06:28:21
品牌 Logo 应用领域
伯恩斯 - BOURNS 数据线路滤波器过滤器LTE
页数 文件大小 规格书
3页 296K
描述
Integrated Passive & Active Devices

2FAF-M8R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8504.50.80.00风险等级:5.82
Is Samacsys:N认证:IEC
电容:20 µF最大直流电阻:120 Ω
滤波器类型:DATA LINE FILTER高度:0.9 mm
JESD-609代码:e3长度:2 mm
安装类型:SURFACE MOUNT功能数量:4
最高工作温度:85 °C最低工作温度:-40 °C
包装方法:TAPE AND REEL物理尺寸:L2.0XB2.0XH0.9 (mm)/L0.079XB0.079XH0.035 (inch)
端子面层:Tin (Sn)Base Number Matches:1

2FAF-M8R 数据手册

 浏览型号2FAF-M8R的Datasheet PDF文件第2页浏览型号2FAF-M8R的Datasheet PDF文件第3页 
Features  
Applications  
Lead free as standard  
RoHS compliant*  
ESD protection  
Cell phones  
PDAs and notebooks  
GPS and SMART cards  
Color LCD Display Panel  
Protects up to 4 lines  
Bidirectional EMI filtering  
2FAF-M8R Integrated Passive & Active Devices  
General Information  
The 2FAF-M8R device, manufactured using Thin Film on Silicon  
technology, provides ESD protection for the external ports of  
portable electronic devices such as cell phones, notebooks and  
PDAs.  
FOR EACH LINE  
100 OHM  
INT1~4  
EXT1~4  
The ESD protection provided by the component enables a data  
port to withstand a minimum ±8 ꢀK ꢁontact ꢂ ±ꢃ± ꢀK Air  
Discharge per the ESD test method specified in IEꢁ 6ꢃ000-4-2.  
The device measures 2 mm x 2 mm and can be mounted  
directly onto an FR4 printed circuit board. The device meets  
typical thermal cycle and bend test specifications without the  
use of an underfill material.  
10 pF  
10 pF  
GND  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Min.  
80  
Nom.  
ꢃ00  
20  
Max.  
Unit  
Resistance  
R
ꢃ20  
24  
ꢁapacitance @ 2.± K, ꢃ MHz  
Rated Standoff Koltage  
Breakdown Koltage @ ꢃ mA  
Forward Koltage @ ꢃ0 mA  
Leakage ꢁurrent @ 3 K  
ꢃ6  
pF  
K
KWM  
KBR  
KF  
±
6
K
0.8  
K
ID  
0.ꢃ  
µA  
ESD Protection: IEꢁ 6ꢃ000-4-2  
ꢁontact Discharge  
±8  
±ꢃ±  
kK  
kK  
Air Discharge  
Frequency:  
Attenuation @ 800-3000 MHz  
ꢁut-off (±0 IꢂO) Zero Bias  
fꢁ  
2±  
3±  
ꢃ±0  
db  
MHz  
Dꢁ Power per Resistor  
P
ꢃ00  
mW  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
TJ  
Min.  
-40  
Nom.  
+2±  
Max.  
+8±  
Unit  
°ꢁ  
Operating Temperature Range  
Storage Temperature Range  
TSTG  
-±±  
+2±  
+ꢃ±0  
°ꢁ  
*RoHS Directive 2002/95/EC Jan 27 2003, including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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