Datasheet > 射频和微波 > 射频/微波放大器> AMMC-5620-W50

AMMC-5620-W50

更新时间： 2024-02-28 23:55:27

品牌	Logo	应用领域
安华高科 - AVAGO		射频和微波射频放大器微波放大器
页数	文件大小	规格书
8页	588K
描述
6 - 20 GHz High Gain Amplifier

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技术参数
数据手册

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AMMC-5620-W50 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	DIE OR CHIP	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.33.00.01
风险等级：	5.1	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	16 dB	最大输入功率 (CW)：	20 dBm
功能数量：	1	最大工作频率：	20000 MHz
最小工作频率：	6000 MHz	封装等效代码：	DIE OR CHIP
电源：	5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	130 mA
技术：	GAAS	Base Number Matches：	1

AMMC-5620-W50 数据手册

AMMC-5620

6 - 20 GHz High Gain Ampliﬁer

Data Sheet

Chip Size: 1410 x 1010 µm (55.5 x 39.7 mils)

Chip Size Tolerance: 10 µm ( 0.4 mils)

Chip Thickness: 100 10 µm (4 0.4 mils)

Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)

Description

Features

Avago Technologies’ AMMC-5620 MMIC is a GaAs wide- • Frequency Range: 6 - 20 GHz

band ampliﬁer designed for medium output power and

high gain over the 6 - 20 GHz frequency range. The 3

cascaded stages provide high gain while the single bias

• High Gain: 19 dB Typical

• Output Power: 15dBm Typical

supply oﬀers ease of use. It is fabricated using a PHEMT • Input and Output Return Loss: < -10 dB

integrated circuit process. The RF input and output ports

have matching circuitry for use in 50-Ω environments.

The backside of the chip is both RF and DC ground. This

• Positive Gain Slope: + 0.21dB/GHz Typical

• Single Supply Bias: 5 V @ 95 mA Typical

helpssimplifytheassemblyprocessandreducesassembly

related performance variations and costs. For improved

Applications

• General purpose, wide-band ampliﬁer in communica-

tion systems or microwave instrumentation

reliability and moisture protection, the die is passivated

at the active areas.The MMIC is a cost eﬀective alternative

to hybrid (discrete FET) ampliﬁers that require complex

tuning and assembly processes.

• High gain ampliﬁer

[1]

AMMC-5620 Absolute Maximum Ratings

Symbol

Parameters/Conditions

Drain Supply Voltage

Total Drain Current

DC Power Dissipation

RF CW Input Power

Channel Temp.

Units

Min.

Max.

7.5

135

1.0

dBm

° C

+150

Operating Backside Temp. ° C

Storage Temp. ° C

- 55

- 65

stg

+165

+300

max

Maximum Assembly Temp. ° C

(60 sec max)

Note:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

Note: These devices are ESD sensitive. The following precautions are strongly recommended.

Ensure that an ESD approved carrier is used when dice are transported from one destination to

another. Personal grounding is to be worn at all times when handling these devices

12 3 4 5 6 7 8

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