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ALM31122-TR1G PDF预览

ALM31122-TR1G

更新时间: 2024-01-24 06:04:28
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器
页数 文件大小 规格书
12页 622K
描述
700MHz - 1GHz 1-Watt High Linearity Amplifier

ALM31122-TR1G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LCC22(UNSPEC)Reach Compliance Code:compliant
风险等级:5.82Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:13.7 dB最大输入功率 (CW):25 dBm
安装特点:SURFACE MOUNT功能数量:1
端子数量:22最大工作频率:1000 MHz
最小工作频率:700 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC22(UNSPEC)电源:5 V
射频/微波设备类型:WIDE BAND MEDIUM POWER子类别:RF/Microwave Amplifiers
最大压摆率:440 mA表面贴装:YES
技术:GAASBase Number Matches:1

ALM31122-TR1G 数据手册

 浏览型号ALM31122-TR1G的Datasheet PDF文件第2页浏览型号ALM31122-TR1G的Datasheet PDF文件第3页浏览型号ALM31122-TR1G的Datasheet PDF文件第4页浏览型号ALM31122-TR1G的Datasheet PDF文件第5页浏览型号ALM31122-TR1G的Datasheet PDF文件第6页浏览型号ALM31122-TR1G的Datasheet PDF文件第7页 
ALM-31122  
700MHz - 1GHz  
1-Watt High Linearity Amplifier  
Data Sheet  
Description  
Features  
Avago Technologies’ ALM-31122 is a high linearity 1 Watt  
PA with good OIP3 performance and exceptionally good  
PAE at 1dB gain compression point, achieved through the  
use of Avago Technologies’ proprietary 0.25um GaAs En-  
hancement-mode pHEMT process.  
Fully matched, input and output  
High linearity and P1dB  
Unconditionally stable across load condition  
Built-in adjustable temperature-compensated internal  
bias circuitry  
All matching components are fully integrated within the  
module and the 50RF input and output pins are already  
internally AC-coupled. This makes the ALM-31122 ex-  
tremely easy to use as the only external parts are DC sup-  
ply bypass capacitors.  
[1]  
GaAs E-pHEMT Technology  
5V supply  
Excellent uniformity in product specifications  
Tape-and-Reel packaging option available  
MSL-3 and Lead-free  
The adjustable temperature-compensated internal bias  
circuit allows the device to be operated at either class A or  
class AB operation.  
High MTTF for base station application  
The ALM-31122 is housed inside a miniature 5.0 x 6.0 x 1.1  
mm 22-lead multiple-chips-on-board (MCOB) module  
package.  
Specifications  
3
900 MHz; 5V, 394mA (typical)  
15.6 dB Gain  
Component Image  
47.6 dBm Output IP3  
3
5.0 x 6.0 x 1.1 mm 22-lead MCOB  
31.6 dBm Output Power at 1dB gain compression  
52.5% PAE at P1dB  
22  
19  
21  
20  
18  
17  
16  
GND  
GND  
1
2 dB Noise Figure  
2
NC  
RF_OUT  
31122  
WWYY  
XXXX  
Applications  
3
4
GND  
GND  
RF_IN  
GND 15  
14  
GND  
Class A driver amplifier for GSM/CDMA Base Stations.  
13  
12  
GND  
GND  
5
General purpose gain block.  
Note:  
6
7
9
8
10  
11  
GND  
1. Enhancement mode technology employs positive gate voltage,  
thereby eliminating the need of negative gate voltage associated  
with conventional depletion mode devices.  
Top View  
Bottom View  
Notes:  
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model = 120 V  
Package marking provides orientation and identification  
“31122” = Device Part Number  
“WWYY= Work week and Year of manufacture  
“XXXX= Last 4 digit of Lot number  
ESD Human Body Model = 500 V  
Refer to Avago Application Note A004R:  
Electrostatic Discharge, Damage and Control.  

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