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ALM-1412-TR1G PDF预览

ALM-1412-TR1G

更新时间: 2024-02-21 10:16:32
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器全球定位系统
页数 文件大小 规格书
16页 192K
描述
GPS LNA-Filter Front-End Module

ALM-1412-TR1G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:MODULE,12LEAD,.13Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.8Is Samacsys:N
其他特性:CMOS COMPATIBLE特性阻抗:50 Ω
构造:COMPONENT增益:11 dB
最大输入功率 (CW):15 dBm功能数量:1
端子数量:12最大工作频率:1575 MHz
最小工作频率:封装主体材料:PLASTIC/EPOXY
封装等效代码:MODULE,12LEAD,.13电源:1/2.85 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:15 mA技术:GAAS
Base Number Matches:1

ALM-1412-TR1G 数据手册

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ALM-1412  
GPS LNA-Filter Front-End Module  
Data Sheet  
Description  
Features  
Avago Technologies’ ALM-1412 is an LNA module, with  
integrated filter, designed for GPS band applications at  
1.575GHz. The LNA uses Avago Technologies’proprietary  
GaAs Enhancement-mode pHEMT process to achieve  
high gain with very low noise figure and high linearity.  
Noise figure distribution is very tightly controlled. A  
CMOS-compatible shutdown pin is included either for  
turning the LNA on/off, or for current adjustment. The  
integrated filter utilizes an Avago Technologies’ leading-  
edge FBAR filter for exceptional rejection at Cell/PCS-  
Band frequencies.  
Very Low Noise Figure: 0.82 dB typical  
High Gain: 13.5 dB typical  
High IIP3 and IP1dB  
Exceptional Cell/PCS-Band rejection  
Advanced GaAs E-pHEMT Technology  
Low external component count  
Wide Supply Voltage: 1 V to 3.6 V  
Shutdown current: < 0.1 μA  
CMOS compatible shutdown pin (SD) current @ 2.8 V:  
0.1 mA  
The ALM-1412 is useable down to 1 V operation. It  
achieves low noise figure, high gain and linearity even at  
1 V, making it suitable for use in critical low-power GPS  
applications or during low-battery situations.  
Adjustable current via single external  
resistor/voltage  
Meets MSL3 and Lead-Free  
ESD-protected RF input: 3 kV HBM  
Small package dimension: 3.3(L)x2.1(W)x1.1(H) mm  
Application  
GPS Band LNA  
3
Specifications (Typical Performance at 25°C)  
Component Image  
At 1.575 GHz, Vdd = 2.85 V, Idd = 8.0 mA  
Gain = 13.5 dB  
3
SURFACE MOUNT 3.3 x 2.1 x 1.1 mm 12-Lead MCOB  
NF = 0.82 dB  
IIP3 = +7.0 dBm, IP1dB = +2.7 dBm  
S11 = -8.4 dB, S22 = -12.3 dB  
Cell-Band Rejection: 54 dBc  
PCS-Band Rejection: 63 dBc  
At 1.575 GHz, 1.0 V supply  
S21 = 8.8 dB  
RF_IN 1  
Gnd 2  
SD 3  
9 Gnd  
1412  
WWYY  
8 FILTER-OUT  
7 Gnd  
TOP VIEW  
NF = 1.22 dB  
Idd = 1.9 mA  
Gnd 9  
FILTER-OUT 8  
Gnd 7  
1 RF_IN  
2 Gnd  
3 SD  
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
For RF_IN (Pin 1): ESD Human Body Model = 3 kV  
All other pins: ESD Machine Model = 40 V  
ESD Human Body Model = 300 V  
BOTTOM VIEW  
Note:  
Refer to Avago Technologies Application Note A004R:  
Electrostatic Discharge, Damage and Control  
Package marking provides orientation and identification  
“1412= Product Code  
“YY= Year of manufacture  
“WW= Work Week of manufacture  

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