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ALM-11336-TR1G PDF预览

ALM-11336-TR1G

更新时间: 2024-01-27 05:33:51
品牌 Logo 应用领域
安华高科 - AVAGO 电信集成电路电信电路放大器
页数 文件大小 规格书
12页 398K
描述
Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature

ALM-11336-TR1G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:COB包装说明:QCCN,
针数:36Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.82Is Samacsys:N
JESD-30 代码:R-PQCC-N36长度:10 mm
湿度敏感等级:2功能数量:1
端子数量:36最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:QCCN封装形状:RECTANGULAR
封装形式:CHIP CARRIER座面最大高度:1.6 mm
标称供电电压:5 V表面贴装:YES
电信集成电路类型:TELECOM CIRCUIT温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:0.845 mm
端子位置:QUAD宽度:7 mm
Base Number Matches:1

ALM-11336-TR1G 数据手册

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ALM-11336  
1850 MHz – 1980 MHz  
Low Noise, High Linearity Amplifier Module  
with Fail-Safe Bypass Feature  
Data Sheet  
Description  
Features  
Avago Technologies’ ALM-11336 is an easy-to-use GaAs  
MMIC Tower Mount Amplifier (TMA) LNA Module with low  
IL bypass path.The module has low noise and high linearity  
achieved through the use of Avago Technologies’ propri-  
•ꢀ Very Low Noise Figure  
•ꢀ Low Bypass IL  
•ꢀ Good Return Loss  
etary 0.25 mm GaAs Enhancement-mode pHEMT process. •ꢀ Fail-safe Bypass mode  
All matching components are fully integrated within the  
module and the 50 ohm RF input and output pins are  
already internally AC-coupled. This makes the ALM-11336  
•ꢀ High linearity performance  
•ꢀ High isolation @LNA mode  
extremely easy to use as the only external parts are DC •ꢀ Flat gain  
supply bypass capacitors. For optimum performance  
at other bands, ALM-11036 (776-870 MHz), ALM-11136  
(870-915 MHz) and ALM-11236 (1710-1850) are recom-  
•ꢀ GaAs E-pHEMT Technology  
•ꢀ Single 5 V power supply  
3
mended. All ALM-11x36 share the same package and pin •ꢀ Compact MCOB package 7.0 x 10.0 x 1.5 mm  
out configuration.  
•ꢀ MSL2a  
Pin Configuration and Package Marking  
Specifications  
3
7.0 x 10.0 x 1.5 mm 36-lead MCOB  
1980 MHz; 5 V, 100 mA (Typical)  
•ꢀ 15.3 dB Gain  
1
26  
2
3
4
5
6
7
25  
24  
23  
22  
21  
20  
•ꢀ ≥ 18 dB RL  
•ꢀ 0.72 dB Noise Figure  
•ꢀ 17.9 dBm IIP3  
•ꢀ 3.8 dBm Input Power at 1dB gain compression  
•ꢀ 0.78 dB Bypass IL  
8
19  
Pin  
4
Connection  
RF_IN  
•ꢀ ≥ 18 dB Bypass RL  
•ꢀ ≥ 50 dB isolation @LNA mode  
26  
1
23  
RF_OUT  
EXT_P2  
EXT_P1  
Vdd  
25  
24  
23  
22  
21  
20  
2
3
4
5
6
7
28  
Applications  
30  
Tower Mount Amplifier (TMA)  
Cellular Infrastructure  
33  
Others  
GND  
19  
8
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model = 300 V  
ESD Human Body Model = 2000 V  
Refer to Avago Application Note A004R:  
Electrostatic Discharge, Damage and Control.  
Note:  
Package marking provides orientation and identification  
“11336” = Device Part Number  
“WWYY” = Work week and Year of manufacture  
“XXXX” = Last 4 digit of Lot number  

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