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ABA-53563-TR2G PDF预览

ABA-53563-TR2G

更新时间: 2024-01-16 10:54:42
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 98K
描述
3.5 GHz Broadband Silicon RFIC Amplifier 3.5 dB noise figure

ABA-53563-TR2G 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:TSSOP6,.08Reach Compliance Code:compliant
风险等级:5.26Is Samacsys:N
其他特性:HIGH RELIABILITY特性阻抗:50 Ω
构造:COMPONENT增益:20 dB
最大输入功率 (CW):20 dBmJESD-609代码:e3
安装特点:SURFACE MOUNT功能数量:1
端子数量:6最大工作频率:3500 MHz
最小工作频率:封装主体材料:PLASTIC/EPOXY
封装等效代码:TSSOP6,.08电源:5 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:57 mA表面贴装:YES
技术:BIPOLAR端子面层:Matte Tin (Sn)
最大电压驻波比:1.2Base Number Matches:1

ABA-53563-TR2G 数据手册

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ABA-53563  
3.5 GHz Broadband Silicon RFIC Amplifier  
Data Sheet  
Description  
Features  
Avago’s ABA-53563 is an economical, easy-to-use, • Operating frequency: DC ~ 3.5 GHz  
internally 50-ohm matched silicon monolithic  
amplifier that offers excellent gain and flat broadband  
• 21.5 dB gain  
response from DC to 3.5 GHz. Packaged in an ultra- • VSWR < 2.0 throughout operating frequency  
miniature industry-standard SOT-363 package, it  
requires half the board space of a SOT-143 package.  
• 12.7 dBm output P1dB  
• 3.5 dB noise figure  
At 2 GHz, the ABA-53563 offers a small-signal gain  
of 21.5 dB, output P1dB of 12.7 dBm and 22.9 dBm  
• Unconditionally stable  
output third order intercept point. It is suitable for • Single 5V supply (Id = 46 mA)  
use as buffer amplifiers for wideband applications.  
They are designed for low cost gain blocks in cellular  
• Lead-free option available  
applications, DBS tuners, LNB and other wireless  
communications systems.  
Applications  
• Amplifier for cellular, cordless, special mobile radio, PCS,  
ISM, wireless LAN, DBS, TVRO, and TV tuner applications  
ABA-53563 is fabricated using Avago’s HP25 silicon  
bipolar process, which employs a double-diffused  
single polysilicon process with self-aligned submicron  
emitter geometry. The process is capable of  
simultaneous high fT and high NPN breakdown  
Attention:  
(25 GHz fT at 6V BVCEO). The process utilizes indus-  
Observe precautions for  
try standard device oxide isolation technologies and  
handling electrostatic  
submicron aluminum multilayer interconnect to  
achieve superior performance, high uniformity, and  
proven reliability.  
sensitive devices.  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 1A)  
Surface Mount Package: SOT-363/SC70  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  
Simplified Schematic  
RF  
Output  
& Vcc  
Vcc  
Pin Connections and Package Marking  
Output  
& Vcc  
GND 1  
RF  
Input  
GND 2  
Input  
GND 3  
Vcc  
Ground 2  
Ground 3  
Ground 1  
Note:  
Top View. Package marking provides orientation  
and identification. xis character to identify  
date code.  

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