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AT28C010-12DK-MQ PDF预览

AT28C010-12DK-MQ

更新时间: 2024-02-11 22:50:34
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
17页 230K
描述
Space 1-megabit (128K x 8) Paged Parallel EEPROMs

AT28C010-12DK-MQ 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSOP1,Reach Compliance Code:compliant
Factory Lead Time:13 weeks风险等级:1.63
最长访问时间:120 nsJESD-30 代码:R-PDSO-G32
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:5 V座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT28C010-12DK-MQ 数据手册

 浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第2页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第3页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第4页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第5页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第6页浏览型号AT28C010-12DK-MQ的Datasheet PDF文件第7页 
Features  
Fast Read Access Time – 120 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 128 Bytes  
Internal Control Timer  
Fast Write Cycle Time  
Page Write Cycle Time 10 ms Maximum  
1 to 128-byte Page Write Operation  
Low Power Dissipation  
AT28C010-12DK Mil  
80 mA Active Current  
300 µA CMOS Standby Current  
Space  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 104 or 105 Cycles  
1-megabit  
(128K x 8)  
Paged Parallel  
EEPROMs  
Data Retention: 10 Years  
Operating Range: 4.5V to 5.5V, -55 to +125°C  
CMOS and TTL Compatible Inputs and Outputs  
Batch Tested for 10 Krad TID and 70 MeV Latch-up Capability  
JEDEC Approved byte-Wide Pinout  
435 Mils Wide 32-Pin Flat Pack Package  
Description  
AT28C010-12DK  
The AT28C010-12DK is a high-performance Electrically Erasable and Programmable  
Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8  
bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device  
offers access times to 120 ns with power dissipation of just 440 mW. When the device  
is deselected, the CMOS standby current is less than 300 µA.  
The AT28C010-12DK is accessed like a Static RAM for the read or write cycle without  
the need for external components. The device contains a 128-byte page register to  
allow writing of up to 128 bytes simultaneously. During a write cycle, the address and  
1 to 128 bytes of data are internally latched, freeing the address and data bus for  
other operations. Following the initiation of a write cycle, the device will automatically  
write the latched data using an internal control timer. The end of a write cycle can be  
detected by DATA POLLING of I/O7. Once the end of a write cycle has been detected  
a new access for a read or write can begin.  
Preliminary  
Atmel's 28C010 has additional features to ensure high quality in manufacturing. The  
device utilizes internal error correction for extended endurance and improved data  
retention characteristics. An optional software data protection mechanism is available  
to guard against inadvertent writes. The device also includes an extra 128 bytes of  
EEPROM for device identification or tracking.  
Rev. 4259A–AERO–06/03  
1

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