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930104704 PDF预览

930104704

更新时间: 2024-01-28 14:26:46
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路静态存储器光电二极管异步传输模式ATM
页数 文件大小 规格书
16页 793K
描述
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM

930104704 技术参数

生命周期:Not Recommended包装说明:QFF,
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.8
Is Samacsys:NBase Number Matches:1

930104704 数据手册

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Features  
Operating Voltage: 5V  
Access Time: 30, 45 ns  
Very Low Power Consumption  
Active: 600 mW (Max)  
Standby: 1 µW (Typ)  
Wide Temperature Range: -55C to +125C  
400 Mils Width Packages: FP32 and SB32  
TTL Compatible Inputs and Outputs  
Asynchronous  
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2  
Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019  
QML Q and V with SMD 5962-89598  
ESCC with Specification 9301/047  
Rad. Tolerant  
128Kx8, 5-Volt  
Very Low Power  
CMOS SRAM  
Description  
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.  
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an  
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time  
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-  
vides excellent protection against soft errors due to noise.  
M65608E  
The M65608E is processed according to the methods of the latest revision of the MIL  
PRF 38535 or ESCC 9000.  

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