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5962-9317702VNX PDF预览

5962-9317702VNX

更新时间: 2024-02-13 01:46:25
品牌 Logo 应用领域
美国微芯 - MICROCHIP ATM异步传输模式先进先出芯片
页数 文件大小 规格书
20页 1591K
描述
FIFO, 16KX9, 30ns, Asynchronous, CMOS, 0.400 INCH, FP-28

5962-9317702VNX 技术参数

生命周期:Active零件包装代码:DFP
包装说明:DFP,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.81
最长访问时间:30 ns其他特性:RETRANSMIT
周期时间:40 nsJESD-30 代码:R-XDFP-F28
内存密度:147456 bit内存宽度:9
功能数量:1端子数量:28
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:16KX9
可输出:NO封装主体材料:UNSPECIFIED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Qualified筛选级别:MIL-PRF-38535 Class V
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

5962-9317702VNX 数据手册

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Features  
First-in First-out Dual Port Memory  
16384 bits x 9 Organization  
Fast Flag and Access Times: 15, 30 ns  
Wide Temperature Range: - 55°C to + 125°C  
Fully Expandable by Word Width or Depth  
Asynchronous Read/Write Operations  
Empty, Full and Half Flags in Single Device Mode  
Retransmit Capability  
Bi-directional Applications  
Battery Back-up Operation: 2V Data Retention  
TTL Compatible  
Single 5V ± 10% Power Supply  
Rad. Tolerant  
High Speed  
16 Kb x 9  
QML Q and V with SMD 5962-93177  
Description  
Parallel FIFO  
The M67206F implements a first-in first-out algorithm, featuring asynchronous  
read/write operations. The FULL and EMPTY flags prevent data overflow and under-  
flow. The Expansion logic allows unlimited expansion in word size and depth with no  
timing penalties. Twin address pointers automatically generate internal read and write  
addresses, and no external address information is required. Address pointers are  
automatically incremented with the write pin and read pin. The 9 bits wide data are  
used in data communications applications where a parity bit for error checking is nec-  
essary. The Retransmit pin resets the Read pointer to zero without affecting the write  
pointer. This is very useful for retransmitting data when an error is detected in the  
system.  
M67206F  
Using an array of eight transistors (8T) memory cell, the M67206F combines an  
extremely low standby supply current (typ = 0.1 µA) with a fast access time at 15 ns  
over the full temperature range. All versions offer battery backup data retention capa-  
bility with a typical power consumption at less than 2 µW.  
The M67206F is processed according to the methods of the latest revision of the MIL  
PRF 38535 (Q and V) or ESA SCC 9000.  
Rev. 4143F–AERO–06/02  
1

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