Datasheet > 存储 > SRAM> 5962-8959818VTC

5962-8959818VTC

更新时间： 2024-02-06 05:01:06

品牌	Logo	应用领域
爱特美尔 - ATMEL		内存集成电路静态存储器
页数	文件大小	规格书
15页	337K
描述
Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

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5962-8959818VTC 数据手册

Features

• Operating Voltage: 5V

• Access Time: 30, 45 ns

• Very Low Power Consumption

– Active: 250 mW (Typ)

– Standby: 1 µW (Typ)

– Data Retention: 0.5 µW (Typ)

• Wide Temperature Range: -55°C to +125°C

• 400 Mils Width Packages: FP32 and SB32

• TTL Compatible Inputs and Outputs

• Asynchronous

• Single 5V Supply

• Equal Cycle and Access Time

• Gated Inputs:

Rad. Tolerant

128K x 8

– No Pull-up/down

Very Low Power

5V CMOS SRAM

– Resistors Are Required

• QML Q and V with SMD 5962-89598

• ESCC B with Specification 9301/047

Description

M65608E

The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an

extremely low standby supply current (Typical value = 0.2 µA) with a fast access time

at 30 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

Rev. 4151I–AERO–03/04

12 3 4 5 6 7...15

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型号	品牌	描述	获取价格	数据表
5962-8959818VZC	ATMEL	Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM	获取价格
5962-8959819M7A	ETC	x8 SRAM	获取价格
5962-8959819M7X	MICROSS	Standard SRAM, 128KX8, 35ns, CMOS, CDSO32, CERAMIC, SOJ-32	获取价格
5962-8959819MMA	ETC	x8 SRAM	获取价格
5962-8959819MMX	ETC	x8 SRAM	获取价格
5962-8959819MNA	ETC	x8 SRAM	获取价格