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5962-8959818QTC PDF预览

5962-8959818QTC

更新时间: 2024-02-21 21:52:13
品牌 Logo 应用领域
爱特美尔 - ATMEL 内存集成电路静态存储器
页数 文件大小 规格书
15页 337K
描述
Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

5962-8959818QTC 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:DIP包装说明:DIP, DIP32,.4
针数:32Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.27Is Samacsys:N
最长访问时间:45 nsI/O 类型:COMMON
JESD-30 代码:R-CDIP-T32JESD-609代码:e4
长度:40.64 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
输出特性:3-STATE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装等效代码:DIP32,.4
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL电源:5 V
认证状态:Qualified筛选级别:MIL-PRF-38535 Class V
座面最大高度:4.32 mm最大待机电流:0.001 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.115 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Gold (Au)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

5962-8959818QTC 数据手册

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Features  
Operating Voltage: 5V  
Access Time: 30, 45 ns  
Very Low Power Consumption  
– Active: 250 mW (Typ)  
– Standby: 1 µW (Typ)  
– Data Retention: 0.5 µW (Typ)  
Wide Temperature Range: -55°C to +125°C  
400 Mils Width Packages: FP32 and SB32  
TTL Compatible Inputs and Outputs  
Asynchronous  
Single 5V Supply  
Equal Cycle and Access Time  
Gated Inputs:  
Rad. Tolerant  
128K x 8  
– No Pull-up/down  
Very Low Power  
5V CMOS SRAM  
– Resistors Are Required  
QML Q and V with SMD 5962-89598  
ESCC B with Specification 9301/047  
Description  
M65608E  
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.  
Atmel brings the solution to applications where fast computing is as mandatory as low  
consumption, such as aerospace electronics, portable instruments, or embarked  
systems.  
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an  
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time  
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-  
vides excellent protection against soft errors due to noise.  
The M65608E is processed according to the methods of the latest revision of the MIL  
STD 883 (class B or S), ESA SCC 9000 or QML.  
Rev. 4151I–AERO–03/04  
1

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