Features
• Fast Read Access Time - 120 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes
– Internal Control Timer
• Fast Write Cycle Time
AT28C010 Mil
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
• Low Power Dissipation
– 80 mA Active Current
1-Megabit
(128K x 8)
Paged Parallel
EEPROMs
– 300 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 104 or 105 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout
AT28C010
Military
(continued)
32 LCC
Pin Configuration
Pin Name
A0 - A16
CE
Function
Top View
Addresses
Chip Enable
Output Enable
Write Enable
A7
A6
A5
A4
A3
A2 10
A1 11
A0 12
I/O0 13
5
6
7
8
9
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
OE
WE
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
CERDIP, FLATPACK
Top View
44 LCC
Top View
NC
A16
A15
A12
A7
1
32 VCC
31 WE
30 NC
29 A14
28 A13
27 A8
PGA
2
3
4
5
6
7
8
9
Top View
A12
A7
7
8
9
39 A13
38 A8
37 A9
36 A11
35 NC
34 NC
33 NC
32 NC
31 OE
30 A10
29 CE
A6
A6
A5 10
NC 11
NC 12
NC 13
A4 14
A3 15
A2 16
A1 17
A5
26 A9
A4
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A3
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
GND 16
0010D–PEEPR–7/09