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5962-0520802QYC PDF预览

5962-0520802QYC

更新时间: 2024-02-29 06:15:51
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路静态存储器异步传输模式ATM
页数 文件大小 规格书
13页 347K
描述
Rad Hard 512K x 8 Very Low Power CMOS SRAM

5962-0520802QYC 技术参数

生命周期:Active零件包装代码:DFP
包装说明:DFP,针数:36
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.73
Is Samacsys:N最长访问时间:15 ns
JESD-30 代码:R-XDFP-F36JESD-609代码:e4
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:36字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX8封装主体材料:UNSPECIFIED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Qualified筛选级别:MIL-PRF-38535 Class V
座面最大高度:3.05 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:GOLD
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL宽度:12.195 mm
Base Number Matches:1

5962-0520802QYC 数据手册

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Features  
Operating Voltage: 3.3V  
Access Time:  
– 15 ns (AT60142F)  
Very Low Power Consumption  
– Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns  
– Standby: 3.3 mW (Typ)  
Wide Temperature Range: -55 to +125°C  
TTL-Compatible Inputs and Outputs  
Asynchronous  
Designed on 0.25 µm Radiation Hardened Process  
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2  
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019  
500 Mils Wide FP36 Package  
Rad Hard  
512K x 8  
ESD Better than 4000V  
Very Low Power  
CMOS SRAM  
Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208  
Description  
The AT60142F is a very low power CMOS static RAM organized as 524 288 x 8 bits.  
Atmel brings the solution to applications where fast computing is as mandatory as low  
consumption, such as aerospace electronics, portable instruments, or embarked  
systems.  
AT60142F  
Utilizing an array of six transistors (6T) memory cells, the AT60142F combines an  
extremely low standby supply current (Typical value = 1 mA) with a fast access time at  
15 ns or better over the full military temperature range. The high stability of the 6T cell  
provides excellent protection against soft errors due to noise.  
The AT60142F is processed according to the methods of the latest revision of the MIL  
PRF 38535 or ESCC 9000.  
It is produced on a radiation hardened 0.25 µm CMOS process.  
Rev. 4408G–AERO–04/09  
1

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