Datasheet > 49F010

49F010

更新时间： 2022-11-25 21:54:16

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存
页数	文件大小	规格书
10页	251K
描述
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory

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数据手册

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49F010 数据手册

Features

Single Voltage Operation

•

- 5V Read

- 5V Reprogramming

Fast Read Access Time - 45 ns

Internal Program Control and Timer

8K bytes Boot Block With Lockout

Fast Erase Cycle Time - 10 seconds

Byte By Byte Programming - 10 µs/Byte

Hardware Data Protection

DATA Polling For End Of Program Detection

Low Power Dissipation

•

1-Megabit

(128K x 8)

5-volt Only

CMOS Flash

Memory

•

- 30 mA Active Current

- 100 µA CMOS Standby Current

Typical 10,000 Write Cycles

•

Description

The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash

Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu-

factured with Atmel’s advanced nonvolatile CMOS technology, the devices offer ac-

cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the

commercial temperature range. When the device is deselected, the CMOS standby

current is less than 100 µA.

AT49F010

AT49HF010

To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re-

quire high input voltages for programming. Five-volt-only commands determine the

read and programming operation of the device. Reading data out of the device is

similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is per-

formed by erasing the entire 1 megabit of memory and then programming on a byte

by byte basis. The byte programming time is a fast 50 µs. The end of a program cycle

can be optionally detected by the DATA polling feature. Once the end of a byte pro-

AT49F010/HF010

(continued)

DIP Top View

Pin Configurations

Pin Name Function

A0 - A16

Addresses

Chip Enable

Output Enable

Write Enable

I/O0 - I/O7 Data Inputs/Outputs

No Connect

PLCC Top View

TSOP Top View

Type 1

0852AX–5/97

12 3 4 5 6 7...10

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