Datasheet > 28C64

28C64

更新时间： 2022-11-26 05:53:07

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器
页数	文件大小	规格书
13页	310K
描述
64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

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28C64 数据手册

Features

• Fast Read Access Time – 150 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

• Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

– 40 mA Active Current

– 100 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling and Toggle Bit for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 100,000 Cycles

64K (8K x 8)

Parallel

– Data Retention: 10 Years

EEPROM with

Page Write and

Software Data

Protection

• Single 5V 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Commercial and Industrial Temperature Ranges

Description

The AT28C64B is a high-performance electrically-erasable and programmable read

only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 150 ns with power dissipation of just 220 mW. When the device is

AT28C64B

deselected, the CMOS standby current is less than 100 µA.

(continued)

Pin Configurations

PDIP, SOIC

Top View

Pin Name

A0 - A12

Function

A12

VCC

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

A11

A10

I/O0 - I/O7

I/O7

I/O6

I/O5

I/O4

I/O3

I/O0

I/O1

I/O2

GND

Don’t Connect

PLCC

Top View

TSOP

Top View

A11

A10

29 A8

28 A9

27 A11

26 NC

25 OE

24 A10

23 CE

22 I/O7

21 I/O6

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

VCC

A12

A1 10

A0 11

NC 12

I/O0 13

Rev. 0270H–12/99

Note:

PLCC package pins 1 and 17 are

DON’T CONNECT.

12 3 4 5 6 7...13

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