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AOSS21319C PDF预览

AOSS21319C

更新时间: 2024-02-25 21:54:10
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 322K
描述
Power Field-Effect Transistor,

AOSS21319C 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Base Number Matches:1

AOSS21319C 数据手册

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AOSS21319C  
30V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
• Trench Power MOSFET technology  
• Low RDS(ON)  
• Low Gate Charge  
-30V  
ID (at VGS=-10V)  
RDS(ON) (at VGS=-10V)  
RDS(ON) (at VGS=-4.5V)  
-2.8A  
< 100mΩ  
< 150mΩ  
• RoHS and Halogen-Free Compliant  
ESD protection  
Applications  
• This device is ideal for Load Switch  
SOT23  
D
Top View  
Bottom View  
D
G
S
S
G
Orderable Part Number  
Package Type  
Form  
Tape & Reel  
Minimum Order Quantity  
AOSS21319C  
SOT23-3  
3000  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TA=25°C  
TA=70°C  
-2.8  
Continuous Drain  
Current  
ID  
A
-2.1  
Pulsed Drain Current C  
IDM  
PD  
-10  
TA=25°C  
TA=70°C  
1.3  
W
Power Dissipation B  
0.8  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t ≤ 10s  
RqJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
Steady-State  
Steady-State  
100  
63  
125  
80  
RqJL  
Rev.1.0: August 2019  
www.aosmd.com  
Page 1 of 5  

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