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A29DL323UV-90 PDF预览

A29DL323UV-90

更新时间: 2024-01-19 20:55:44
品牌 Logo 应用领域
联笙电子 - AMICC 闪存
页数 文件大小 规格书
46页 467K
描述
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)

A29DL323UV-90 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:TSSOP, TSSOP48,.8,20Reach Compliance Code:unknown
风险等级:5.58Is Samacsys:N
最长访问时间:90 ns备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:8,63端子数量:48
字数:2097152 words字数代码:2000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:8K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.045 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
Base Number Matches:1

A29DL323UV-90 数据手册

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A29DL323 Series  
32M-Bit CMOS Low Voltage Dual Operation Flash Memory  
Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)  
Features  
nSector group protection  
nTwo bank organization enabling simultaneous execution of  
erase / program and read  
nBank organization: 2 banks (8 Mbits + 24 Mbits)  
nMemory organization:  
- 4,194,304 words x 8 bits (BYTE mode)  
- 2,097,152 words x 16 bits (WORD mode)  
nSector organization:  
- Any sector group can be protected  
- Any protected sector group can be temporary  
unprotected  
nSectors can be used for boot application  
nHardware reset and standby using  
nAutomatic sleep mode  
pin  
RESET  
71 sectors (8 Kbytes / 4 Kwords × 8 sectors, 64 Kbytes /  
32 Kwords × 63 sectors)  
n2 types of sector organization  
- T type: Boot sector allocated to the highest address  
(sector)  
- B type: Boot sector allocated to the lowest address  
(sector)  
n3-state output  
nBoot block sector protect by  
nConforms to common flash memory interface (CFI)  
nExtra One Time Protect Sector provided  
(ACC) pin  
WP  
Part No.  
Access Operating Power supply current Standby  
time  
supply  
(Active mode)  
(Max.)  
current  
(Max.)  
5 A  
(Max.)  
voltage  
A29DL323 90ns  
2.7V~  
3.6V  
16mA  
30mA  
nAutomatic program  
- Program suspend / resume  
nUnlock bypass program  
nAutomatic erase  
nOperating ambient temperature: -40 to 85°C  
nProgram / erase time  
- Program: 9.0 µs / byte (TYP.)  
11.0 µs / word (TYP.)  
- Sector erase: 0.7 s (TYP.)  
- Chip erase  
- Sector erase (sectors can be combined freely)  
nErase suspend / resume  
nProgram / Erase completion detection  
- Detection through data polling and toggle bits  
nNumber of program / erase: 1,000,000 times (MIN.)  
nPackage options  
- 48-pin TSOP (I) or 63-ball TFBGA  
- Detection through RY/  
pin  
BY  
General Description  
The A29DL323 is a flash memory organized of 33,554,432  
bits and 71 sectors. Sectors of this memory can be erased  
at a low voltage (2.7 to 3.6 V) supplied from a single power  
source, or the contents of the entire chip can be erased.  
Two modes of memory organization, BYTE mode  
(4,194,304 words × 8 bits) and WORD mode (2,097,152  
words × 16 bits), are selectable so that the memory can be  
programmed in byte or word units.  
The A29DL323 can be read while its contents are being  
erased or programmed. The memory cell is divided into two  
banks. While sectors in one bank are being erased or  
programmed, data can be read from the other bank thanks  
to the simultaneous execution architecture. The banks are  
8 Mbits and 24 Mbits.  
Because the A29DL323 enables the boot sector to be  
erased, it is ideal for storing a boot program. In addition,  
program code that controls the flash memory can be also  
stored, and the program code can be programmed or  
erased without the need to load it into RAM. Eight small  
sectors for storing parameters are provided, each of which  
can be erased in 8 Kbytes units.  
Once a program or erase command sequence has been  
executed, an automatic program or automatic erase  
function internally executes program or erase and  
verification automatically.  
Because the A29DL323 can be electrically erased or  
programmed by writing an instruction, data can be  
reprogrammed on-board after the flash memory has been  
installed in a system, making it suitable for a wide range of  
applications.  
This flash memory comes in two types. The T type has a  
boot sector located at the highest address (sector) and the  
B type has a boot sector at the lowest address (sector).  
PRELIMINARY  
(May, 2002, Version 0.0)  
1
AMIC Technology, Inc.  

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