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N02L163WC2AT-70I PDF预览

N02L163WC2AT-70I

更新时间: 2024-01-31 21:50:40
品牌 Logo 应用领域
AMI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 185K
描述
Standard SRAM, 128KX16, 70ns, CMOS, PDSO44, TSOP2-44

N02L163WC2AT-70I 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2-44针数:44
Reach Compliance Code:not_compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.86
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.41 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:2.5/3.3 V认证状态:Not Qualified
座面最大高度:1.25 mm最大待机电流:0.00001 A
最小待机电流:1.8 V子类别:SRAMs
最大压摆率:0.016 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mmBase Number Matches:1

N02L163WC2AT-70I 数据手册

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AMI Semiconductor, Inc.  
ULP Memory Solutions  
670 North McCarthy Blvd. Suite 220  
Milpitas, CA 95035  
N02L163WC2A  
PH: 408-935-7777, FAX: 408-935-7770  
2Mb Ultra-Low Power Asynchronous CMOS SRAM  
128K × 16 bit  
Features  
• Single Wide Power Supply Range  
Overview  
2.3 to 3.6 Volts  
• Very low standby current  
The N02L163WC2A is an integrated memory  
device containing a 2 Mbit Static Random Access  
Memory organized as 131,072 words by 16 bits.  
The device is designed and fabricated using AMI  
Semiconductor’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with two chip enable  
(CE1 and CE2) controls and output enable (OE) to  
allow for easy memory expansion. Byte controls  
(UB and LB) allow the upper and lower bytes to be  
accessed independently and can also be used to  
deselect the device. The N02L163WC2A is optimal  
for various applications where low-power is critical  
such as battery backup and hand-held devices.  
The device can operate over a very wide  
2.0µA at 3.0V (Typical)  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.8V  
• Very fast output enable access time  
30ns OE access time  
o
o
temperature range of -40 C to +85 C and is  
available in JEDEC standard packages compatible  
with other standard 128Kb x 16 SRAMs  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package avail-  
able  
• RoHS Compliant  
Product Family  
Standby  
Current  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Typical  
Operating  
Part Number  
Package Type  
Speed  
Temperature  
(ISB), Typical  
N02L163WC2AB  
N02L163WC2AT  
N02L163WC2AB2  
48 - BGA  
44 - TSOP II  
55ns @ 2.7V  
70ns @ 2.3V  
-40oC to +85oC  
2.3V - 3.6V  
2 µA  
2 mA @ 1MHz  
48 - BGA Green  
N02L163WC2AT2 44 - TSOP II Green  
(DOC# 14-02-013 REV H ECN# 01-1270)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.  
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