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AS4LC4M4F1-50TI PDF预览

AS4LC4M4F1-50TI

更新时间: 2024-01-18 13:28:14
品牌 Logo 应用领域
ALSC 动态存储器
页数 文件大小 规格书
14页 269K
描述
4M×4 CMOS DRAM (Fast Page) 3.3V Family

AS4LC4M4F1-50TI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:SOP, TSOP24/26,.36
针数:26/24Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.81访问模式:FAST PAGE
最长访问时间:50 ns其他特性:RAS ONLY/CAS BEFORE RAS/SELF REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G24
JESD-609代码:e0内存密度:16777216 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:24字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:TSOP24/26,.36封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
电源:3.3 V认证状态:Not Qualified
刷新周期:2048自我刷新:YES
最大待机电流:0.002 A子类别:DRAMs
最大压摆率:0.12 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

AS4LC4M4F1-50TI 数据手册

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May 2001  
AS4LC4M4F1  
®
4M×4 CMOS DRAM (Fast Page) 3.3V Family  
Features  
• Refresh  
• Organization: 4,194,304 words × 4 bits  
- 2048 refresh cycles, 32 ms refresh interval  
- RAS-only or CAS-before-RAS refresh or self-refresh  
• TTL-compatible, three-state I/O  
• JEDEC standard package  
- 300 mil, 24/26-pin SOJ  
• 3.3V power supply  
• High speed  
- 50/60 ns RAS access time  
- 25/30 ns column address access time  
- 12/15 ns CAS access time  
• Low power consumption  
- Active: 500 mW max  
- Standby: 3.6 mW max, CMOS I/O  
• Fast page mode  
• Latch-up current 200 mA  
• ESD protection 2000 volts  
• Industrial and commercial temperature available  
Pin arrangement  
Pin designation  
Pin(s)  
A0 to A10  
RAS  
Description  
SOJ  
TSOP*  
Address inputs  
Row address strobe  
Column address strobe  
Write enable  
Input/output  
Output enable  
Power  
VCC  
GND  
I/O3  
I/O2  
CAS  
OE  
VCC  
GND  
I/O3  
I/O2  
CAS  
OE  
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
1
2
3
4
5
6
19  
18  
17  
16  
15  
14  
I/O0  
I/O1  
WE  
RAS  
NC  
I/O0  
I/O1  
WE  
RAS  
NC  
CAS  
A9  
A9  
WE  
A10  
A8  
A7  
A6  
A5  
A4  
A10  
A8  
A7  
A6  
A5  
A4  
GND  
8
9
I/O0 to I/O3  
OE  
8
9
10  
11  
12  
13  
19  
18  
17  
16  
15  
14  
26  
25  
24  
23  
22  
21  
A0  
A1  
A2  
A3  
VCC  
A0  
A1  
A2  
A3  
VCC  
10  
11  
12  
13  
VCC  
GND  
GND  
Ground  
*TSOP availability to be determined  
Selection guide  
Symbol  
AS4LC4M4F1-50  
AS4LC4M4F1-60  
Unit  
ns  
Maximum RAS access time  
tRAC  
tCAA  
tCAC  
tOEA  
tRC  
50  
25  
60  
30  
Maximum column address access time  
Maximum CAS access time  
ns  
12  
15  
ns  
Maximum output enable (OE) access time  
Minimum read or write cycle time  
Minimum fast page mode cycle time  
Maximum operating current  
13  
15  
ns  
80  
100  
30  
ns  
tPC  
25  
ns  
ICC1  
ICC5  
120  
1.0  
110  
1.0  
mA  
mA  
Maximum CMOS standby current  
5/16/01; v.1.0 Restored  
Alliance Semiconductor  
P. 1 of 14  
Copyright © Alliance Semiconductor. All rights reserved.  

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