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AS4LC256K16EO-60JC PDF预览

AS4LC256K16EO-60JC

更新时间: 2022-10-11 11:58:05
品牌 Logo 应用领域
ALSC 动态存储器
页数 文件大小 规格书
25页 526K
描述
3.3V 256K X 16 CMOS DRAM (EDO)

AS4LC256K16EO-60JC 数据手册

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AS4LC256K16EO  
®
3.3V 256K X 16 CMOS DRAM (EDO)  
Features  
• EDO page mode  
• 5V I/O tolerant  
• Organization: 262,144 words × 16 bits  
• High speed  
• 512 refresh cycles, 8 ms refresh interval  
- RAS-only or CAS-before-RAS refresh or self refresh  
• Read-modify-write  
• LVTTL-compatible, three-state I/O  
• JEDEC standard packages  
- 400 mil, 40-pin SOJ  
- 45/60 ns RAS access time  
- 10/12/15/20 ns column address access time  
- 7/10/10 ns CAS access time  
• Low power consumption  
- Active: 280 mW max (AS4LC256K16EO-35)  
- Standby: 2.8 mW max, CMOS I/O (AS4LC256K16EO-  
35)  
- 400 mil, 40/44-pin TSOP II  
• 3.3V power supply  
• Latch-up current > 200 mA  
Pin arrangement  
Pin designation  
Pin(s)  
A0 to A8  
RAS  
Description  
TSOP II  
SOJ  
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
I/O4  
GND  
I/O15  
I/O14  
I/O13  
I/O12  
GND  
I/O11  
I/O10  
I/O9  
I/O8  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
Address inputs  
Vcc  
I/O0  
I/O1  
I/O2  
I/O3  
Vcc  
I/O4  
I/O5  
I/O6  
I/O7  
NC  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
GND  
I/O15  
I/O14  
I/O13  
I/O12  
GND  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
LCAS  
UCAS  
OE  
A8  
A7  
2
3
Row address strobe  
Input/output  
4
5
I/O0 to I/O15  
OE  
6
7
Output enable  
I/O5  
8
I/O6  
9
UCAS  
LCAS  
Column address strobe, upper byte  
Column address strobe, lower byte  
Read/write control  
Power (3.3V ± 0.3V)  
Ground  
I/O7  
10  
NC  
NC  
NC  
NC  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
WE  
WE  
RAS  
NC  
A0  
A1  
A2  
A3  
Vcc  
LCAS  
UCAS  
OE  
WE  
RAS  
NC  
A0  
VCC  
A6  
A5  
A4  
GND  
A8  
GND  
A7  
A1  
A6  
A2  
A5  
A3  
A4  
VCC  
GND  
Selection guide  
Symbol AS4LC256K16EO-35 AS4LC256K16EO-45 AS4LC256K16EO-60 Unit  
Maximum RAS access time  
tRAC  
tCAA  
tCAC  
tOEA  
tRC  
35  
17  
7
45  
20  
10  
10  
80  
17  
60  
200  
60  
25  
ns  
ns  
Maximum column address access time  
Maximum CAS access time  
10  
ns  
Maximum output enable (OE) access time  
Minimum read or write cycle time  
Minimum EDO page mode cycle time  
Maximum operating current  
7
10  
ns  
50  
15  
70  
200  
100  
30  
ns  
tPC  
ns  
ICC1  
ICC2  
50  
mA  
µA  
Maximum CMOS standby current  
200  
4/11/01; V.1.1  
Alliance Semiconductor  
P. 1 of 25  
Copyright © Alliance Semiconductor. All rights reserved.  

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