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AS4C4M4E1Q-60JC PDF预览

AS4C4M4E1Q-60JC

更新时间: 2024-02-21 04:59:33
品牌 Logo 应用领域
ALSC 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 254K
描述
EDO DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

AS4C4M4E1Q-60JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ28,.34
针数:28Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.9访问模式:FAST PAGE WITH EDO
最长访问时间:60 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-J28
JESD-609代码:e0长度:18.54 mm
内存密度:16777216 bit内存集成电路类型:EDO DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:28
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ28,.34
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):225电源:5 V
认证状态:Not Qualified刷新周期:2048
座面最大高度:3.56 mm自我刷新:NO
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.1 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

AS4C4M4E1Q-60JC 数据手册

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March 2001  
AS4C4M4EOQ  
AS4C4M4E1Q  
®
4M 4 CMOS QuadCAS DRAM (EDO) family  
Features  
• Organization: 4,194,304 words × 4 bits  
AS4C4M4E1Q  
• High speed  
- RAS-only and hidden refresh or CAS-before-RAS refresh  
or self-refresh  
• TTL-compatible  
• 4 separate CAS pins allow for separate I/O operation  
• JEDEC standard package  
- 50/60 ns RAS access time  
- 25/30 ns column address access time  
- 12/15 ns CAS access time  
• Low power consumption  
- Active: 495 mW max  
- 300 mil, 28-pin SOJ  
- Standby: 5.5 mW max, CMOS I/O  
• Extended data out  
- 300 mil, 28-pin TSOP  
• 5V power supply  
• Refresh  
• Latch-up current 200 mA  
• ESD protection 2000 mV  
- 4096 refresh cycles, 64 ms refresh interval for  
4C4M4EOQ  
- 2048 refresh cycles, 32 ms refresh interval for  
Pin arrangement  
Pin designation  
Pin(s)  
A0 to A11  
RAS  
Description  
SOJ  
TSOP  
Address inputs  
Row address strobe  
Column address strobe  
Write enable  
Input/output  
Output enable  
Power  
VCC  
GND  
I/O3  
I/O2  
CAS3  
OE  
A9  
CAS2  
NC  
A8  
A7  
A6  
A5  
VCC  
GND  
I/O3  
I/O2  
CAS3  
OE  
1
2
3
4
5
6
28  
27  
26  
25  
24  
23  
22  
21  
1
2
3
4
5
6
28  
27  
26  
25  
24  
23  
I/O0  
I/O1  
WE  
I/O0  
I/O1  
WE  
CAS  
RAS  
RAS  
*NC/A11  
CAS0  
*NC/A11  
CAS0  
A9  
WE  
CAS2  
NC  
A8  
A7  
A6  
A5  
A4  
GND  
7
8
9
10  
11  
12  
13  
14  
7
8
22  
21  
CAS1  
A10  
CAS1  
A10  
I/O0 to I/O3  
OE  
9
20  
19  
18  
17  
16  
15  
20  
19  
18  
17  
16  
15  
10  
11  
12  
13  
14  
A0  
A1  
A2  
A3  
VCC  
A0  
A1  
A2  
A3  
VCC  
VCC  
A4  
GND  
GND  
Ground  
NC  
No Connection  
* NC on 2K refresh version; A11 on 4K refresh version  
Selection guide  
Symbol  
tRAC  
tCAA  
tCAC  
tOEA  
tRC  
4C4M4EOQ/E1Q-50  
4C4M4EOQ/E1-60  
Unit  
ns  
Maximum RAS access time  
50  
25  
12  
13  
85  
20  
110  
1.0  
60  
Maximum column address access time  
Maximum CAS access time  
30  
ns  
15  
ns  
Maximum output enable (OE) access time  
Minimum read or write cycle time  
Minimum hyper page mode cycle time  
Maximum operating current  
15  
ns  
100  
24  
ns  
tPC  
ns  
ICC1  
ICC5  
100  
1.0  
mA  
mA  
Maximum CMOS standby current  
3/22/01; v.1.0  
Alliance Semiconductor  
P. 1 of 16  
Copyright © Alliance Semiconductor. All rights reserved.  

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