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AS4C14405-50TC PDF预览

AS4C14405-50TC

更新时间: 2024-02-16 08:07:11
品牌 Logo 应用领域
ALSC 动态存储器
页数 文件大小 规格书
16页 395K
描述
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)

AS4C14405-50TC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSOP, TSOP20/26(UNSPEC)Reach Compliance Code:unknown
风险等级:5.92最长访问时间:50 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G20
JESD-609代码:e0内存密度:4194304 bit
内存集成电路类型:EDO DRAM内存宽度:4
端子数量:20字数:1048576 words
字数代码:1000000最高工作温度:70 °C
最低工作温度:组织:1MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装等效代码:TSOP20/26(UNSPEC)
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
电源:5 V认证状态:Not Qualified
刷新周期:1024自我刷新:NO
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.08 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

AS4C14405-50TC 数据手册

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High Performance  
1M×4  
AS4C14400  
AS4C14405  
®
CMOS DRAM  
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)  
Preliminary information  
Features  
• 1024 refresh cycles, 16 ms refresh interval  
• Organization: 1,048,576 words × 4 bits  
- RAS-only or CAS-before-RAS refresh  
• Read-modify-write  
• TTL-compatible, three-state I/O  
• JEDEC standard packages  
- 300 mil, 20/26-pin SOJ  
• High speed  
- 40/50/60/70 ns RAS access time  
- 20/25/30/35 ns column address access time  
- 10/13/15/18 ns CAS access time  
• Low power consumption  
- Active: 385 mW max (-60)  
- Standby: 5.5 mW max, CMOS I/O  
• Fast page mode (AS4C14400) or EDO (AS4C14405)  
- 300 mil, 20/26-pin TSOP  
• Single 5V power supply  
• ESD protection 2001V  
• Latch-up current 200 mA  
Pin arrangement  
Pin designation  
Pin(s)  
Description  
SOJ  
TSOP  
A0 to A9  
RAS  
Address inputs  
Row address strobe  
Input/output  
I/O0  
I/O1  
WE  
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
GND  
I/O3  
I/O2  
CAS  
OE  
I/O0  
I/O1  
WE  
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
GND  
I/O3  
I/O2  
CAS  
OE  
I/O0 to I/O3  
OE  
Output enable  
Column address strobe  
Read/write control  
Power (5.0 ± 0.5V)  
Ground  
9
10  
11  
12  
13  
9
10  
11  
12  
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
A0  
A1  
A2  
A3  
VCC  
A0  
A1  
A2  
A3  
VCC  
18  
A8  
A7  
A6  
A5  
A4  
CAS  
17  
16  
15  
14  
WE  
13  
V
CC  
GND  
Selection guide  
Symbol  
4C14400-40 4C14400-50 4C14400-60 4C14400-70  
Unit  
ns  
Maximum RAS access time  
t
t
t
t
t
t
I
I
40  
20  
10  
10  
70  
30  
90  
1.0  
50  
25  
13  
13  
90  
35  
80  
1.0  
60  
30  
70  
35  
RAC  
CAA  
CAC  
OEA  
RC  
Maximum column address access time  
Maximum CAS access time  
ns  
15  
18  
ns  
Maximum output enable (OE) access time  
Minimum read or write cycle time  
Minimum fast page mode cycle time  
Maximum operating current  
15  
18  
ns  
110  
40  
130  
45  
ns  
ns  
PC  
70  
60  
mA  
mA  
CC1  
CC5  
Maximum CMOS standby current  
Shaded areas contain advance information.  
1.0  
1.0  
ALLIANCE SEMICONDUCTOR  

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