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AS4C14400-70TC PDF预览

AS4C14400-70TC

更新时间: 2024-02-09 13:02:01
品牌 Logo 应用领域
ALSC 动态存储器
页数 文件大小 规格书
16页 395K
描述
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)

AS4C14400-70TC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:SOP, TSOP20/26(UNSPEC)针数:20
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.91
访问模式:FAST PAGE最长访问时间:70 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G20JESD-609代码:e0
内存密度:4194304 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:20
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:TSOP20/26(UNSPEC)
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240电源:5 V
认证状态:Not Qualified刷新周期:1024
自我刷新:NO最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.06 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED

AS4C14400-70TC 数据手册

 浏览型号AS4C14400-70TC的Datasheet PDF文件第2页浏览型号AS4C14400-70TC的Datasheet PDF文件第3页浏览型号AS4C14400-70TC的Datasheet PDF文件第4页浏览型号AS4C14400-70TC的Datasheet PDF文件第5页浏览型号AS4C14400-70TC的Datasheet PDF文件第6页浏览型号AS4C14400-70TC的Datasheet PDF文件第7页 
High Performance  
1M×4  
AS4C14400  
AS4C14405  
®
CMOS DRAM  
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)  
Preliminary information  
Features  
• 1024 refresh cycles, 16 ms refresh interval  
• Organization: 1,048,576 words × 4 bits  
- RAS-only or CAS-before-RAS refresh  
• Read-modify-write  
• TTL-compatible, three-state I/O  
• JEDEC standard packages  
- 300 mil, 20/26-pin SOJ  
• High speed  
- 40/50/60/70 ns RAS access time  
- 20/25/30/35 ns column address access time  
- 10/13/15/18 ns CAS access time  
• Low power consumption  
- Active: 385 mW max (-60)  
- Standby: 5.5 mW max, CMOS I/O  
• Fast page mode (AS4C14400) or EDO (AS4C14405)  
- 300 mil, 20/26-pin TSOP  
• Single 5V power supply  
• ESD protection 2001V  
• Latch-up current 200 mA  
Pin arrangement  
Pin designation  
Pin(s)  
Description  
SOJ  
TSOP  
A0 to A9  
RAS  
Address inputs  
Row address strobe  
Input/output  
I/O0  
I/O1  
WE  
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
GND  
I/O3  
I/O2  
CAS  
OE  
I/O0  
I/O1  
WE  
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
GND  
I/O3  
I/O2  
CAS  
OE  
I/O0 to I/O3  
OE  
Output enable  
Column address strobe  
Read/write control  
Power (5.0 ± 0.5V)  
Ground  
9
10  
11  
12  
13  
9
10  
11  
12  
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
A0  
A1  
A2  
A3  
VCC  
A0  
A1  
A2  
A3  
VCC  
18  
A8  
A7  
A6  
A5  
A4  
CAS  
17  
16  
15  
14  
WE  
13  
V
CC  
GND  
Selection guide  
Symbol  
4C14400-40 4C14400-50 4C14400-60 4C14400-70  
Unit  
ns  
Maximum RAS access time  
t
t
t
t
t
t
I
I
40  
20  
10  
10  
70  
30  
90  
1.0  
50  
25  
13  
13  
90  
35  
80  
1.0  
60  
30  
70  
35  
RAC  
CAA  
CAC  
OEA  
RC  
Maximum column address access time  
Maximum CAS access time  
ns  
15  
18  
ns  
Maximum output enable (OE) access time  
Minimum read or write cycle time  
Minimum fast page mode cycle time  
Maximum operating current  
15  
18  
ns  
110  
40  
130  
45  
ns  
ns  
PC  
70  
60  
mA  
mA  
CC1  
CC5  
Maximum CMOS standby current  
Shaded areas contain advance information.  
1.0  
1.0  
ALLIANCE SEMICONDUCTOR  

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